Dependence of photoconductivity on the dark Fermi level position in amorphous silicon alloys

1984 ◽  
Vol 45 (4) ◽  
pp. 467-469 ◽  
Author(s):  
M. Hack ◽  
S. Guha ◽  
M. Shur
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Silicon Alloys ◽  
Fermi Level Position

Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

1990 ◽  
Vol 192 ◽  
Author(s):  
W. B. Jackson ◽  
M. Hack
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Defect Formation ◽  
Defect States ◽  
Theoretical Understanding ◽  
Fermi Level Position ◽  
Electron Accumulation ◽  
Capacitance Voltage ◽  
Mis Structures

ABSTRACTThe effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

The Fermi level position in doped amorphous silicon

1979 ◽  
Vol 12 (5) ◽  
pp. L209-L213 ◽  
Author(s):  
R H Williams ◽  
R R Varma ◽  
W E Spear ◽  
P G Le Comber
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Fermi Level Position

Dynamics of the creation of light-induced defects in amorphous silicon alloys

1986 ◽  
Vol 33 (4) ◽  
pp. 2512-2519 ◽  
Author(s):  
M. Hack ◽  
S. Guha ◽  
W. den Boer
Keyword(s):  
Amorphous Silicon ◽  
Silicon Alloys ◽  
The Creation ◽  
Induced Defects
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