Above threshold characteristics of amorphous silicon alloy thin‐film transistors

1984 ◽  
Vol 45 (11) ◽  
pp. 1202-1203 ◽  
Author(s):  
C. Hyun ◽  
M. S. Shur ◽  
M. Hack ◽  
Z. Yaniv ◽  
V. Cannella
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Alloy Thin Film ◽  
Silicon Alloy

Ambipolar Performances of Novel Amorphous Silicon-Germanium Alloy Thin-Film Transistors

1993 ◽  
Vol 32 (Part 2, No. 8A) ◽  
pp. L1043-L1045 ◽  
Author(s):  
Shou Wei Hsieh ◽  
Chun Yen Chang ◽  
Yeong Shyang Lee ◽  
Chiung Wei Lin ◽  
Biing Sheng Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Thin Film Transistors ◽  
Alloy Thin Film ◽  
Germanium Alloy ◽  
Amorphous Silicon Germanium

Short Channel Length Planar Tft's Using Amorphous Silicon Alloys

1986 ◽  
Vol 70 ◽  
Author(s):  
M. Yang ◽  
Z. Yaniv ◽  
M. Vijan ◽  
V. Cannella
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Alloy Thin Film ◽  
Large Area ◽  
Silicon Thin Film ◽  
Short Channel ◽  
Feature Size ◽  
Silicon Alloys ◽  
Silicon Alloy ◽  
Channel Lengths

ABSTRACTThere is a rapid growth of interest in the application of amorphous silicon alloy thin film devices to large area microelectronic circuits. Increased current levels are a constant goal since gains in device current result in proportional gains in power and speed. Mobility limitations in amorphous silicon thin film transistors have directed interest toward short conduction channel devices to achieve higher current levels; furthermore, compatibility with large area processing makes photolithography with 10μm feature size very attractive. Consequently, innovative techniques, which define channel lengths by processing parameters rather than by mask feature size are necessary. Previous work has applied such techniques to vertical structure TFT's which define channel lengths by the vertical height of deposited layers. Here, we report on a technique which achieves short channel lengths in planar structures using etching parameters to define short channel lengths. Amorphous silicon alloy TFTs have been fabricated with channel lengths of ≈2μm which reach currents of lma. These techniques broaden the range of application of amorphous silicon alloy TFTs by providing devices capable of operating at higher currents and higher speeds.

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film
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