Study of defects in a rapidly degraded InGaAsP/InGaP double‐heterostructure laser grown by liquid phase epitaxy

1984 ◽  
Vol 44 (9) ◽  
pp. 861-863 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Akio Yamaguchi ◽  
Satoshi Komiya ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Heterostructure Laser

Catastrophic degradation of InGaAsP/InGaP double‐heterostructure lasers grown on (001) GaAs substrates by liquid‐phase epitaxy

1985 ◽  
Vol 58 (11) ◽  
pp. 3996-4002 ◽  
Author(s):  
Osamu Ueda ◽  
Kiyohide Wakao ◽  
Satoshi Komiya ◽  
Akio Yamaguchi ◽  
Shoji Isozumi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure ◽  
Gaas Substrates

Liquid phase epitaxy grown PbSnSeTe/PbSe double heterostructure diode lasers

1996 ◽  
Vol 37 (4) ◽  
pp. 439-443 ◽  
Author(s):  
Z. Feit ◽  
J. Fuchs ◽  
D. Kostyk ◽  
W. Jalenak
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Diode Lasers ◽  
Double Heterostructure

Influences of thin active layer in (GaAl)As double‐heterostructure lasers grown by liquid‐phase epitaxy

1984 ◽  
Vol 56 (11) ◽  
pp. 3088-3095 ◽  
Author(s):  
T. Hayakawa ◽  
N. Miyauchi ◽  
T. Suyama ◽  
S. Yamamoto ◽  
H. Hayashi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Active Layer ◽  
Liquid Phase Epitaxy ◽  
Double Heterostructure
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