High‐rate deposition of amorphous hydrogenated silicon from a SiH4plasma

1984 ◽  
Vol 44 (6) ◽  
pp. 600-602 ◽  
Author(s):  
T. Hamasaki ◽  
M. Ueda ◽  
A. Chayahara ◽  
M. Hirose ◽  
Y. Osaka
Keyword(s):  
High Rate ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

High Rate Growth of Amorphous Hydrogenated Silicon Films and their Device Applications

1997 ◽  
Vol 43 (2-3) ◽  
pp. 131-142 ◽  
Author(s):  
Tanay Seth ◽  
C Mukherjee ◽  
C Anandan ◽  
P N Dixit ◽  
O S Panwar ◽  
...  
Keyword(s):  
Silicon Films ◽  
High Rate ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Device Applications

VHF Plasma Deposition: A Comparative Overview

1992 ◽  
Vol 258 ◽  
Author(s):  
A. Shah ◽  
J. Dutta ◽  
N. Wyrsch ◽  
K. Prasad ◽  
H. Curtins ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Chemical Vapour ◽  
High Energy ◽  
High Rate ◽  
Rf Plasma ◽  
Particle Detectors ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
High Energy Tail ◽  
Internal Mechanical Stress

ABSTRACTThe use of plasma excitation frequencies f in the VHF band (30–300 MHz), and particularly of f=70 MHz, for the high-rate deposition of amorphous hydrogenated silicon (a-Si:H) is described. Deposition rates, using monosilane (SiH4) as source gas, are thereby increased roughly five fold to over 10 Å/s as compared with the conventional case of RF plasma enhanced chemical vapour deposition with f=13.56 MHz. This may possibly be attributed to an enhancement in the high-energy tail of the electron energy distribution function (EEDF) of the plasma. Thereby, no noticeable deterioration in film properties is found.Characteristics of VHF-deposited a-Si:H films are extensively reported, including properties like microstructure, hydrogen effusion behaviour and its low internal mechanical stress. High quality hydrogenated microcrystalline silicon (μc-Si:H) can be deposited at low substrate temperature and low plasma power densities thanks to VHF glow discharge. This can be linked to a reduction in sheath potential and to the energy of the ions arriving at the growing surface. Thereafter, use of VHF plasma in applications such as 100 μm thick a-Si:H layer for particle detectors and powder-free deposition of solar cells with efficiencies over 8% are reported.

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
Sign in / Sign up

Export Citation Format

Share Document