Fill factor related issues in hydrogenated amorphous Si solar cells

2014 ◽  
Vol 129 ◽  
pp. 64-69 ◽  
Author(s):  
Qi Wang
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
Si Solar Cells ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Photovoltage profiling of hydrogenated amorphous Si solar cells

1984 ◽  
Vol 56 (2) ◽  
pp. 522-530 ◽  
Author(s):  
D. J. Szostak ◽  
B. Goldstein
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Photocurrent increase in amorphous Si solar cells by increased reflectivity of LiF/Al electrodes

2012 ◽  
Vol 107 ◽  
pp. 259-262 ◽  
Author(s):  
T. Lanz ◽  
L. Fang ◽  
S.J. Baik ◽  
K.S. Lim ◽  
B. Ruhstaller
Keyword(s):  
Solar Cells ◽  
Si Solar Cells ◽  
Amorphous Si

IMPACT OF WIDE BANDGAP P-TYPE NC-SI ON THE PERFORMANCE OF A-SI SOLAR CELLS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 57-63 ◽  
Author(s):  
X. DENG ◽  
W. WANG ◽  
S. HAN ◽  
H. POVOLNY ◽  
W. DU ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Functional ◽  
Nanocrystalline Silicon ◽  
Functional Approach ◽  
Wide Bandgap ◽  
Quantum Size ◽  
Si Solar Cells ◽  
P Type ◽  
The Impact ◽  
Hydrogenated Amorphous

This paper reports the impact of a wide bandgap p-type hydrogenated nanocrystalline silicon (nc-Si:H) on the performances of hydrogenated amorphous silicon (a-Si:H) based solar cells. The p-layer consists of nanometer-sized Si Crystallites and has a wide effective bandgap determined mainly by the quantum size-confinement effect (QSE). By incorporation of this p-layer into the devices we have obtained high performances of a-Si:H top solar cells with V oc = 1.045 V and FF = 70.3%, and much improved mid and bottom a-SiGe:H cells, deposited on stainless steel (SS) substrate. The effects of the band-edge mismatch at the p/i-interface on the I-V characteristics of the solar cells are discussed on the bases on the bases of the density-functional approach and the AMPS model.

High-efficiency p–i–n superstrate amorphous Si solar cells on SiOxperiodic arrays of three-dimensional microstructure prepared by soft imprinting

2016 ◽  
Vol 9 (4) ◽  
pp. 042301 ◽  
Author(s):  
Chisato Niikura ◽  
Amartya Chowdhury ◽  
Bancha Janthong ◽  
Porponth Sichanugrist ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Three Dimensional ◽  
Si Solar Cells ◽  
Amorphous Si

Simulation of InAIN/Si Single-Heterojunction Solar Cells Using wxAMPS

2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei
Keyword(s):  
Solar Cells ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Indium Content ◽  
Open Circuit ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.

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