Independently variable band gaps and lattice constants in GaAsP strained‐layer superlattices

1983 ◽  
Vol 43 (8) ◽  
pp. 759-761 ◽  
Author(s):  
R. M. Biefeld ◽  
P. L. Gourley ◽  
I. J. Fritz ◽  
G. C. Osbourn
Keyword(s):  
Band Gaps ◽  
Strained Layer ◽  
Lattice Constants ◽  
Strained Layer Superlattices

Infrared Photoconductivity and Photoluminescence from InAs/Ga1–xInxSb Strained-Layer Superlattices

1990 ◽  
Vol 198 ◽  
Author(s):  
R. H. Miles ◽  
D. H. Chow ◽  
T. C. Mcgill
Keyword(s):  
Infrared Detectors ◽  
Far Infrared ◽  
Thin Layers ◽  
Band Gaps ◽  
Infrared Detection ◽  
Strained Layer ◽  
Energy Gaps ◽  
Theoretical Predictions ◽  
Spectrally Resolved ◽  
Strained Layer Superlattices

ABSTRACTWe have examined spectrally resolved photoconductivity and photoluminescence from InAs/Ga1–xInxSb strained-layer superlattices, which have been proposed as infrared detectors in the 8-14 μm region. Our measurements indicate that the energy gaps of the strained–layer superlattices are substantially smaller than those of InAs/GaSb superlattices with similar layer thicknesses, in agreement with previous theoretical predictions. Measurements on InAs/Ga1–xInxSb superlattices with x=0 and 0.25 and layer thicknesses of 25 – 45 A indicate superlattice band gaps of 3 – 15 μm, in excellent agreement with gaps calculated by a two band k · p model. Our results demonstrate that far-infrared energy gaps are compatible with the thin layers necessary for strong optical absorption in type-IT superlattices, and suggest that InAs/Ga1–xInxSb superlattices are promising candidates for far-infrared detection.

Computational Simulation of Photoluminescence and Reflectivity Spectra of a Strained Layer Superlattice

1995 ◽  
Vol 389 ◽  
Author(s):  
M. Di Blasio ◽  
M. Averous
Keyword(s):  
Dispersion Model ◽  
Computational Simulation ◽  
Free Exciton ◽  
Normal Incidence ◽  
Secondary Peak ◽  
Strained Layer ◽  
Lattice Constants ◽  
Reflectivity Spectra ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTPowerful mathematical tools have made it possible to simulate the optical spectra of strained layer superlattices. The results of these calculations are compared to experimental ones obtained on ZnS-ZnSe SLSs. The photoluminescence spectra is dominated by a single major peak with a long asymmetrical tail end or a secondary peak at lower energies. This secondary peak or tail end is attributed to the disorder within the superlattice. The PL spectra is simulated using a novel model based on the following parameters; the free exciton energy, the strain/stress state between the lattice constants, the probability of an occurrence of a dislocation, the probability that the dislocation generates and propagates and the critical thickness. The reflectivity simulation is also novel and is based on an impedance in a spatial dispersion model. It is essential to consider the strain that is induced in the SL, when the dielectric constant is dependent on the variation of the frequency near the fundamental transition energies. As a result only normal incidence is considered.

Si-Ge STRAINED LAYER SUPERLATTICES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-321-C5-327 ◽  
Author(s):  
H. BRUGGER ◽  
G. ABSTREITER
Keyword(s):  
Strained Layer ◽  
Strained Layer Superlattices

nBn structure based on InAs∕GaSb type-II strained layer superlattices

2007 ◽  
Vol 91 (4) ◽  
pp. 043514 ◽  
Author(s):  
J. B. Rodriguez ◽  
E. Plis ◽  
G. Bishop ◽  
Y. D. Sharma ◽  
H. Kim ◽  
...  
Keyword(s):  
Type Ii ◽  
Strained Layer ◽  
Strained Layer Superlattices

Space-charge effects in type-II strained layer superlattices

1998 ◽  
Vol 184-185 ◽  
pp. 728-731 ◽  
Author(s):  
I.V. Bradley ◽  
J.P. Creasey ◽  
K.P. O'Donnell
Keyword(s):  
Space Charge ◽  
Type Ii ◽  
Space Charge Effects ◽  
Charge Effects ◽  
Strained Layer ◽  
Strained Layer Superlattices

On the Existence of Multiple Equilibrium States in Strained-Layer Superlattices

1987 ◽  
Vol 103 ◽  
Author(s):  
William C. Johnson
Keyword(s):  
Free Energy ◽  
Equilibrium State ◽  
Stable Equilibrium ◽  
Multiple Equilibrium ◽  
Equilibrium Thermodynamic ◽  
Relative Thickness ◽  
Two Phase ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTUsing recent results from the thermodynamics of stressed solids, two-phase coexistence in a simple binary strained-layer superlattice is examined. We show that for a given temperature and overall composition of the superlattice, there can exist more than one linearly stable, equilibrium thermodynamic state. That is, there may exist several combinations of relative thickness of the phases and corresponding phase compositions that minimize the free energy of the system. The equilibrium state observed experimentally can, therefore, be influenced by the processing path.

Effects of electric field on ZnSe/ZnS strained-layer superlattices

1990 ◽  
Vol 101 (1-4) ◽  
pp. 550-553 ◽  
Author(s):  
Toshiya Yokogawa ◽  
Tohru Saitoh ◽  
Tadashi Narusawa
Keyword(s):  
Electric Field ◽  
Strained Layer ◽  
Strained Layer Superlattices

Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices

1987 ◽  
Vol 91 ◽  
Author(s):  
N. El-Masry ◽  
N. Hamaguchi ◽  
J.C.L. Tarn ◽  
N. Karam ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Buffer Layers ◽  
Threading Dislocations ◽  
Defect Reduction ◽  
Strained Layer ◽  
Si Substrates ◽  
Density Of Dislocations ◽  
Strained Layer Superlattice ◽  
Strained Layer Superlattices

ABSTRACTInxGa11-xAs-GaAsl-yPy strained layer superlattice buffer layers have been used to reduce threading dislocations in GaAs grown on Si substrates. However, for an initially high density of dislocations, the strained layer superlattice is not an effective filtering system. Consequently, the emergence of dislocations from the SLS propagate upwards into the GaAs epilayer. However, by employing thermal annealing or rapid thermal annealing, the number of dislocation impinging on the SLS can be significantly reduced. Indeed, this treatment greatly enhances the efficiency and usefulness of the SLS in reducing the number of threading dislocations.

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