New experimental evidence of surface ripples on gallium arsenide in laser annealing

1983 ◽  
Vol 42 (5) ◽  
pp. 424-426 ◽  
Author(s):  
Noriaki Tsukada ◽  
Sumio Sugata ◽  
Yoh Mita
Keyword(s):  
Gallium Arsenide ◽  
Experimental Evidence ◽  
Laser Annealing

Melt Depth And Regrowth Kinetics In Pulsed Laser Annealing Of Silicon And Gallium Arsenide

1983 ◽  
Author(s):  
G. J. Galvin ◽  
Michael O. Thompson ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
R. B. Hammond
Keyword(s):  
Gallium Arsenide ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Second harmonic generation during laser annealing of the surface of gallium arsenide

1983 ◽  
Vol 13 (6) ◽  
pp. 687-688 ◽  
Author(s):  
S A Akhmanov ◽  
M F Galyautdinov ◽  
Nikolai I Koroteev ◽  
G A Paĭtyan ◽  
I B Khaĭbullin ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Laser Annealing ◽  
Second Harmonic

Photoluminescence of Ion-Implanted Gallium Arsenide After Laser Annealing

1983 ◽  
pp. 543-548
Author(s):  
M. Takai ◽  
S. Ono ◽  
Y. Ootsuka ◽  
K. Gamo ◽  
S. Namba
Keyword(s):  
Gallium Arsenide ◽  
Laser Annealing ◽  
Ion Implanted

Laser Annealing of Defects in Vpe and Cz Grown Gallium Arsenide with a Pulsed Nd:Yag Laser

1980 ◽  
Vol 1 ◽  
Author(s):  
P. M. Mooney ◽  
J. C. Bourgoin ◽  
J. Icole
Keyword(s):  
Gallium Arsenide ◽  
Laser Irradiation ◽  
Nd:Yag Laser ◽  
Laser Annealing ◽  
Schottky Diodes ◽  
Native Defect ◽  
Pulsed Nd:Yag Laser ◽  
Electron Traps

ABSTRACTGallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) was found to anneal while other electron traps, E(0.39eV) in both materials and E(0.30eV)in Cz material, remained after irradiation. A new trap, E(0.70eV), was observed after laser irradiation in both materials.Cz GaAs samples implanted with both Ga and As were also laser annealed. The E(0.83eV) level was not observed after implantation. The E(0.30eV) trap and new levels, E(0.44eV) and E(0.6leV) were observed. C-V measurements and defect profiles indicate that the recrystallized layer is far from defect free.

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