Optical absorption spectra of surface or interface states in hydrogenated amorphous silicon

1983 ◽  
Vol 42 (1) ◽  
pp. 105-107 ◽  
Author(s):  
W. B. Jackson ◽  
D. K. Biegelsen ◽  
R. J. Nemanich ◽  
J. C. Knights
Keyword(s):  
Optical Absorption ◽  
Amorphous Silicon ◽  
Absorption Spectra ◽  
Hydrogenated Amorphous Silicon ◽  
Interface States ◽  
Optical Absorption Spectra ◽  
Hydrogenated Amorphous

Sub-Bandgap Optical Absorption in Amorphous Silicon using Photo-Pyroelectric Spectroscopy

1991 ◽  
Vol 219 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Absorption Spectrum ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Dependence ◽  
Sample Thickness ◽  
Pyroelectric Effect ◽  
Radiative Quantum Efficiency ◽  
Set Up ◽  
Hydrogenated Amorphous

ABSTRACTMeasurements of the optical absorption spectrum of doped and undoped hydrogenated amorphous silicon (a-Si:H) for photon energies ranging from 0.8 to 2.5 eV are obtained using photo-pyroelectric spectroscopy (PPES). This technique, based upon the pyroelectric effect, has a simpler experimental set-up than photo-thermal deflection spectroscopy, and presently has a sensitivity of ad > 10-3, where d is the sample thickness. In addition, using PPES we have measured the non-radiative quantum efficiency in a-Si:H, and find that it has a strong wavelength dependence for sub-bandgap illumination.

Sign in / Sign up

Export Citation Format

Share Document