Hydrogen annealing of silicon gate‐nitride‐oxide‐silicon nonvolatile memory devices

1982 ◽  
Vol 41 (7) ◽  
pp. 641-643 ◽  
Author(s):  
James A. Topich ◽  
Raymond A. Turi
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Hydrogen Annealing ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

70 nm Silicon-Oxide-Nitride-Oxide-Silicon Nonvolatile Memory Devices Using Fowler-Nordheim Programming and Hot Hole Erase Method

2004 ◽  
Vol 43 (4B) ◽  
pp. 2207-2210 ◽  
Author(s):  
Soodoo Chae ◽  
Changju Lee ◽  
Juhyung Kim ◽  
Sukkang Sung ◽  
Jaeseong Sim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Silicon Oxide ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
Nitride Oxide

Fabrication of YMnO3 Films: New Candidate for Non-Volatile Memory Devices

1996 ◽  
Vol 433 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tadashi Ishida ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Nonvolatile Memory ◽  
Valence Electron ◽  
Bottom Electrode ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Deposition Condition ◽  
Memory Devices ◽  
Non Volatile Memory ◽  
Nonvolatile Memory Devices ◽  
First Time

AbstractWe have proposed ReMnO3 (Re:rare earth) thin films, as a new candidate for nonvolatile memory devices. In this paper, we try to fabricate (0001) oriented YMnO3 films on (111)MgO, (0001)ZnO:Al/(0001) sapphire and (111)Pt/(111)MgO using rf magnetron sputtering. We succeed in obtaining (0001) epitaxial YMnO3 films on (111) MgO and (0001)ZnO:Al/(0001)sapphire substrate, and polycrystalline films on (111)Pt/(1 11)MgO for the first time. Electrical property of the bottom electrode (ZnO:Al) changes with varying the deposition condition of YMnO3 films. However, we find an optimum deposition condition of ZnO:Al film such that it functions as a bottom electrode even after YMnO3 film deposition. The dielectric properties of the epitaxial and polycrystalline YMnO3 films are almost the same. The YMnO3 films show leaky electrical properties. This may be caused by a change in the valence electron of Mn from 3+.

Nonvolatile memory devices with Cu2S and Cu-Pc bilayered films

2007 ◽  
Vol 91 (7) ◽  
pp. 073511 ◽  
Author(s):  
Liang Chen ◽  
Yidong Xia ◽  
Xuefei Liang ◽  
Kuibo Yin ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Electric Fatigue in Metal/Ferroelectric Polymer/SiO2/p-Si Capacitors

2013 ◽  
Vol 706-708 ◽  
pp. 103-107
Author(s):  
Jing Hang Hu ◽  
Xue Jian Yan ◽  
Guo Dong Zhu
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
Electrical Stability ◽  
Ferroelectric Polymer ◽  
Nonvolatile Memory Devices ◽  
Electric Fatigue ◽  
Fatigue Endurance

In recent years ferroelectric polymer-based nonvolatile memory devices have attracted much attention due to their flexibility, transparency and ease of production. However, their electrical stability is seldom studied. In this letter we report the observation of electric fatigue in metal/ferroelectric polymer/SiO2/p-Si capacitor memories, which is compared with the electric fatigue obtained from metal/ferroelectric polymer/p-Si capacitors. Our experiments indicate that the existence of SiO2 layer has greatly improved the fatigue endurance in metal/ferroelectric polymer/SiO2/p-Si capacitors. We also discuss the possible mechanism causing this improved fatigue endurance.

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

2001 ◽  
Vol 48 (7) ◽  
pp. 1304-1309 ◽  
Author(s):  
Wen Luh Yang ◽  
Tien Sheng Chao ◽  
Chun-Ming Cheng ◽  
Tung Ming Pan ◽  
Tan Fu Lei
Keyword(s):  
Nonvolatile Memory ◽  
Memory Devices ◽  
High Quality ◽  
Nonvolatile Memory Devices
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