Self‐annealed ion implanted solar cells

1982 ◽  
Vol 41 (10) ◽  
pp. 967-968 ◽  
Author(s):  
E. Gabilli ◽  
R. Lotti ◽  
P. G. Merli ◽  
R. Nipoti ◽  
P. Ostoja
Keyword(s):  
Solar Cells ◽  
Ion Implanted

scholarly journals Fabrication of plasmonic dye-sensitized solar cells using ion-implanted photoanodes

RSC Advances ◽  
2019 ◽  
Vol 9 (35) ◽  
pp. 20375-20384 ◽  
Author(s):  
Navdeep Kaur ◽  
Aman Mahajan ◽  
Viplove Bhullar ◽  
Davinder Paul Singh ◽  
Vibha Saxena ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Metal Nanoparticles ◽  
Dye Sensitized Solar Cells ◽  
Implantation Technique ◽  
Dye Sensitized ◽  
Stability Issue ◽  
The Stability ◽  
Sensitized Solar Cells ◽  
Ion Implanted

Ion implantation technique can resolve the stability issue of metal nanoparticles with liquid iodine-based electrolyte to improve PCE of plasmonic dye-sensitized solar cells.

Ion implanted passivated contacts for interdigitated back contacted solar cells

2015 ◽  
Author(s):  
David L. Young ◽  
William Nemeth ◽  
Vincenzo LaSalvia ◽  
Robert Reedy ◽  
Nicholas Bateman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Ion Implanted

Influence of ion‐implanted titanium on the performance of edge‐defined, film‐fed grown silicon solar cells

1993 ◽  
Vol 62 (14) ◽  
pp. 1615-1616 ◽  
Author(s):  
J. T. Borenstein ◽  
J. I. Hanoka ◽  
B. R. Bathey ◽  
J. P. Kalejs ◽  
S. Mil’shtein
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Ion Implanted

Investigation of single step Co-anneal of ion implanted boron and phosphorous to fabricate N-type front junction solar cells

2013 ◽  
Author(s):  
Ajay D Upadhyaya ◽  
Young-Woo Ok ◽  
Malka Kadish ◽  
Vijaykumar Upadhyaya ◽  
Kyung Sun Ryu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Single Step ◽  
Ion Implanted

Ion-implanted and screen-printed large area 20% efficient N-type front junction Si solar cells

2014 ◽  
Vol 123 ◽  
pp. 92-96 ◽  
Author(s):  
Young-Woo Ok ◽  
Ajay D. Upadhyaya ◽  
Yuguo Tao ◽  
Francesco Zimbardi ◽  
Kyungsun Ryu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Large Area ◽  
Si Solar Cells ◽  
Screen Printed ◽  
Ion Implanted

Flash-lamp annealing of ion-implanted silicon and its application to solar cells

1983 ◽  
Vol 4 (6) ◽  
pp. 166-168 ◽  
Author(s):  
A. Usami ◽  
N. Yoshida ◽  
Y. Inoue
Keyword(s):  
Solar Cells ◽  
Flash Lamp ◽  
Ion Implanted

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

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