A new method to control impact ionization rate ratio by spatial separation of avalanching carriers in multilayered heterostructures

1982 ◽  
Vol 41 (1) ◽  
pp. 67-70 ◽  
Author(s):  
T. Tanoue ◽  
H. Sakaki
Keyword(s):  
Rate Ratio ◽  
Impact Ionization ◽  
Spatial Separation ◽  
Ionization Rate ◽  
New Method ◽  
Impact Ionization Rate ◽  
Multilayered Heterostructures

scholarly journals New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature

2001 ◽  
Vol 24 (2) ◽  
pp. 129-134
Author(s):  
Y. Amhouche ◽  
A. El Abbassi ◽  
K. Raïs ◽  
E. Bendada ◽  
R. Rmaily
Keyword(s):  
Room Temperature ◽  
Impact Ionization ◽  
Ionization Rate ◽  
Channel Length ◽  
New Method ◽  
Short Channel ◽  
Mos Devices ◽  
Impact Ionization Rate ◽  
The Impact

A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested using main of channel length MOSFET devices and compared with others methods.

Calculation of the electron and hole impact ionization rate for wurtzite AlN and GaN

2010 ◽  
Vol 25 (11) ◽  
pp. 115010 ◽  
Author(s):  
G R Li ◽  
Z X Qin ◽  
G F Luo ◽  
B Shen ◽  
G Y Zhang
Keyword(s):  
Impact Ionization ◽  
Ionization Rate ◽  
Impact Ionization Rate

Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT

2012 ◽  
Author(s):  
S. R. Pattanaik ◽  
J. Pradhan ◽  
S. K. Swain ◽  
P. Panda ◽  
G. N. Dash
Keyword(s):  
Impact Ionization ◽  
Small Variation ◽  
Ionization Rate ◽  
Rate Data ◽  
Impact Ionization Rate
Sign in / Sign up

Export Citation Format

Share Document