Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

M. Laviron; D. Delagebeaudeuf; P. Delescluse; P. Etienne; J. Chaplart; Nuyen T. Linh

doi:10.1063/1.93131

Low noise normally on and normally off two‐dimensional electron gas field‐effect transistors

Applied Physics Letters ◽

10.1063/1.93131 ◽

1982 ◽

Vol 40 (6) ◽

pp. 530-532 ◽

Cited By ~ 20

Author(s):

M. Laviron ◽

D. Delagebeaudeuf ◽

P. Delescluse ◽

P. Etienne ◽

J. Chaplart ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Low Noise ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Dimensional Electron Gas

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Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/6/2/006 ◽

1991 ◽

Vol 6 (2) ◽

pp. 103-107 ◽

Cited By ~ 21

Author(s):

M Razeghi ◽

F Omnes ◽

P Maurel ◽

Y J Chan ◽

D Pavlidis

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Dimensional Electron Gas ◽

Lattice Matched

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Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics

10.1109/cornel.1989.79827 ◽

2003 ◽

Cited By ~ 1

Author(s):

Y. Ando ◽

T. Itoh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Noise Modeling ◽

Charge Control ◽

Dimensional Electron Gas

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Accurate modeling for parasitic source resistance in two-dimensional electron gas field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.24345 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1036-1044 ◽

Cited By ~ 19

Author(s):

Y. Ando ◽

T. Itoh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Source Resistance ◽

Dimensional Electron Gas

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DC, small-signal, and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics

IEEE Transactions on Electron Devices ◽

10.1109/16.43802 ◽

1990 ◽

Vol 37 (1) ◽

pp. 67-78 ◽

Cited By ~ 41

Author(s):

Y. Ando ◽

T. Itoh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Small Signal ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Charge Control ◽

Dimensional Electron Gas

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Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22417 ◽

1985 ◽

Vol 32 (12) ◽

pp. 2787-2796 ◽

Cited By ~ 84

Author(s):

A. Cappy ◽

A. Vanoverschelde ◽

M. Schortgen ◽

C. Versnaeyen ◽

G. Salmer

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Noise Modeling ◽

Dimensional Electron Gas

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Analysis of charge control in pseudomorphic two-dimensional electron gas field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.8805 ◽

1988 ◽

Vol 35 (12) ◽

pp. 2295-2301 ◽

Cited By ~ 44

Author(s):

Y. Ando ◽

T. Itoh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Charge Control ◽

Dimensional Electron Gas

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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

Applied Physics A ◽

10.1007/s003390100978 ◽

2002 ◽

Vol 75 (3) ◽

pp. 387-389 ◽

Cited By ~ 3

Author(s):

R.M. Chu ◽

Y.D. Zheng ◽

Y.G. Zhou ◽

P. Han ◽

B. Shen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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Subbands and charge control in a two‐dimensional electron gas field‐effect transistor

Applied Physics Letters ◽

10.1063/1.94734 ◽

1984 ◽

Vol 44 (3) ◽

pp. 307-309 ◽

Cited By ~ 116

Author(s):

B. Vinter

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Field ◽

Charge Control ◽

Effect Transistor ◽

Dimensional Electron Gas

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Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors

Applied Physics Letters ◽

10.1063/1.98722 ◽

1987 ◽

Vol 51 (15) ◽

pp. 1170-1172 ◽

Cited By ~ 73

Author(s):

E. F. Schubert ◽

J. E. Cunningham ◽

W. T. Tsang ◽

G. L. Timp

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Doping Design and Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications

10.7567/ssdm.2002.g-1-5 ◽

2002 ◽

Author(s):

Narihiko Maeda ◽

Kotaro Tsubaki ◽

Tadashi Saitoh ◽

Naoki Kobayashi

Keyword(s):

High Power ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Heterostructure Field Effect Transistors ◽

Dimensional Electron Gas ◽

Gan Heterostructure

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