Low‐noise GaAs field‐effect transistors prepared by molecular beam epitaxy

1981 ◽  
Vol 39 (7) ◽  
pp. 566-569 ◽  
Author(s):  
M. Omori ◽  
T. J. Drummond ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Low Noise

Low‐noise and high‐power GaAs microwave field‐effect transistors prepared by molecular beam epitaxy

1977 ◽  
Vol 48 (1) ◽  
pp. 346-349 ◽  
Author(s):  
A. Y. Cho ◽  
J. V. DiLorenzo ◽  
B. S. Hewitt ◽  
W. C. Niehaus ◽  
W. O. Schlosser ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Field Effect ◽  
Molecular Beam ◽  
Microwave Field ◽  
Field Effect Transistors ◽  
Low Noise

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor

Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy

1989 ◽  
Vol 54 (12) ◽  
pp. 1136-1138 ◽  
Author(s):  
J. B. Kuang ◽  
P. J. Tasker ◽  
Y. K. Chen ◽  
G. W. Wang ◽  
L. F. Eastman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

2017 ◽  
Vol 10 (7) ◽  
pp. 071101 ◽  
Author(s):  
Elaheh Ahmadi ◽  
Onur S. Koksaldi ◽  
Xun Zheng ◽  
Tom Mates ◽  
Yuichi Oshima ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Fabrication of metal‐epitaxial insulator‐semiconductor field‐effect transistors using molecular beam epitaxy of CaF2on Si

1984 ◽  
Vol 45 (8) ◽  
pp. 907-909 ◽  
Author(s):  
T. P. Smith ◽  
Julia M. Phillips ◽  
W. M. Augustyniak ◽  
P. J. Stiles
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors

Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III–V semiconductors for low-power non-volatile memory and multiferroic field effect transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10386-10394 ◽  
Author(s):  
Md. Shafiqur Rahman ◽  
Susmita Ghose ◽  
Liang Hong ◽  
Pradip Dhungana ◽  
Abbas Fahami ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Non Volatile Memory ◽  
Multiferroic Films

SrTiO3 films on GaAs, grown by molecular beam epitaxy, serve as buffer layers for epitaxial growth of ferromagnetic or multiferroic films using pulsed laser deposition.

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