Temperature dependence of optical gain spectra in GaInAsP/InP double‐heterostructure lasers

1981 ◽  
Vol 39 (6) ◽  
pp. 468-470 ◽  
Author(s):  
H. Jung ◽  
E. Göbel ◽  
K. M. Romanek ◽  
M. H. Pilkuhn
2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.


1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.


2017 ◽  
Vol 102 ◽  
pp. 141-146 ◽  
Author(s):  
I. Guizani ◽  
C. Bilel ◽  
M.M. Habchi ◽  
A. Rebey

2007 ◽  
Vol 15 (12) ◽  
pp. 7730 ◽  
Author(s):  
K. Kojima ◽  
Ulrich T. Schwarz ◽  
M. Funato ◽  
Y. Kawakami ◽  
S. Nagahama ◽  
...  

2008 ◽  
Vol 5 (6) ◽  
pp. 2126-2128 ◽  
Author(s):  
Kazunobu Kojima ◽  
Mitsuru Funato ◽  
Yoichi Kawakami ◽  
Harald Braun ◽  
Ulrich Schwarz ◽  
...  

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