A graded‐index waveguide separate‐confinement laser with very low threshold and a narrow Gaussian beam

1981 ◽  
Vol 39 (2) ◽  
pp. 134-137 ◽  
Author(s):  
W. T. Tsang
Keyword(s):  
Gaussian Beam ◽  
Graded Index ◽  
Low Threshold

Low-threshold green laser heterostructures with Zn(Mg)SSe/ZnSe graded-index superlattice waveguide: Structural and optical properties

2011 ◽  
Vol 98 (17) ◽  
pp. 171103 ◽  
Author(s):  
I. V. Sedova ◽  
E. V. Lutsenko ◽  
S. V. Gronin ◽  
S. V. Sorokin ◽  
A. G. Vainilovich ◽  
...  
Keyword(s):  
Optical Properties ◽  
Green Laser ◽  
Structural And Optical Properties ◽  
Graded Index ◽  
Laser Heterostructures ◽  
Low Threshold

Petal-shaped optical vortice generation by a graded-index defective 1DPC nanostructure under irradiation of a Gaussian beam

2015 ◽  
Vol 17 (3) ◽  
pp. 035104 ◽  
Author(s):  
Kazem Jamshidi-Ghaleh ◽  
Farzaneh Bayat ◽  
Arash Phirouznia ◽  
Saeid Soleimani
Keyword(s):  
Gaussian Beam ◽  
Graded Index

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

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