scholarly journals A gallium phosphide high‐temperature bipolar junction transistor

1981 ◽  
Vol 39 (11) ◽  
pp. 895-897 ◽  
Author(s):  
T. E. Zipperian ◽  
L. R. Dawson
1999 ◽  
Vol 595 ◽  
Author(s):  
Seikoh Yoshida ◽  
Joe Suzuki

AbstractHigh-quality GaN was grown using gas-source molecular-beam epitaxy (GSMBE). The mobility of undoped GaN was 350 cm2/Vsec and the carrier concentration was 6×1016 cm−3 at room temperature. A GaN metal semiconductor field-effect transistor (MESFET) and an n-p-n GaN bipolar junction transistor (BJT) were fabricated for hightemperature operation. The high-temperature reliability of the GaN MESFET was also investigated. That is, the lifetime of the FET at 673 K was examined by continuous current injection at 673 K. We confirmed that the FET performance did not change at 673 K for over 1010 h. The aging performance of the BJT at 573 K was examined during continuous current injection at 573 K for over 850 h. The BJT performance did not change at 573 K. The current gain was about 10. No degradation of the metalsemiconductor interface was observed by secondary ion-mass spectrometry (SIMS) and transmission electron microscopy (TEM). It was also confirmed by using Si-ion implantation that the contact resistivity of the GaN surface and electrode materials could be lowered to 7×10-6 ohmcm2.


VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 257-260
Author(s):  
Surinder P. Singh ◽  
Neil Goldsman ◽  
Isaak D. Mayergoyz

The Boltzmann transport equation (BTE) for multiple bands is solved by the spherical harmonic approach. The distribution function is obtained for energies greater than 3 eV. The BTE is solved self consistently with the Poisson equation for a one dimensional npn bipolar junction transistor (BJT). The novel features are: the use of boundary fitted curvilinear grid, and Scharfetter Gummel type discretization of the BTE.


2014 ◽  
Vol 490-491 ◽  
pp. 123-128 ◽  
Author(s):  
Nishka Ranjan ◽  
A.H. Manjunatha Reddy

The last two decades have witnessed a plethora of novel biomaterials that work significantly in the discovery of drugs and the point check of drugs, Biosensors. PLGA (Poly-(L-Lactide-co-glycolic Acid)), has already been shown to be a substrate for manufacture of substrates for OFETs, that in the future would be the forefront of electroceuticals. But, Polylactic Acid (PLA) derived and pegylated nanoparticles generated scaffolds, promote neural self-differentiation, nanowires derived from Polythiophene (PTs) can be utilised in the area of biosensors. Similarly, PT derived PEDOT:PSS(poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) polymer doped with appropriate cations is useful to manipulate directly the biological response of cells on the same grounds, organic electrochemical transistors (OECTs) based on PEDOTPSS coupled with bilayer lipid membranes (BLMs) were shown to act as ion-to-electron converters. A solid-state ion bipolar junction transistor (IBJT) has been developed to serve as a circuit element for neurotransmitter signal delivery. Consequently, the traditional drug discovery methods have far gone by. This era demands a much more modified and multiple disciplined methods for modern drug discovery. This review gives an insight and instance of this paradigm.


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