cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

W. T. Tsang; R. L. Hartman; H. E. Elder; W. R. Holbrook

doi:10.1063/1.91800

cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.91800 ◽

1980 ◽

Vol 37 (2) ◽

pp. 141-144 ◽

Cited By ~ 13

Author(s):

W. T. Tsang ◽

R. L. Hartman ◽

H. E. Elder ◽

W. R. Holbrook

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical Characteristics ◽

Double Heterostructure

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The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy

10.1109/iedm.1979.189551 ◽

1979 ◽

Author(s):

W.T. Tsang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

Infra Red ◽

Current Threshold

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IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1974.18028 ◽

1974 ◽

Vol 21 (11) ◽

pp. 741-741

Author(s):

A.Y. Cho ◽

H.C. Casey

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.92868 ◽

1981 ◽

Vol 39 (9) ◽

pp. 683-685 ◽

Cited By ~ 12

Author(s):

W. T. Tsang ◽

R. L. Hartman ◽

B. Schwartz ◽

P. E. Fraley ◽

W. R. Holbrook

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.92554 ◽

1981 ◽

Vol 39 (1) ◽

pp. 34-37 ◽

Cited By ~ 3

Author(s):

W. T. Tsang ◽

W. R. Holbrook ◽

P. E. Fraley

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure

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Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

Applied Physics Letters ◽

10.1063/1.88832 ◽

1976 ◽

Vol 28 (9) ◽

pp. 501-503 ◽

Cited By ~ 70

Author(s):

A. Y. Cho ◽

R. W. Dixon ◽

H. C. Casey ◽

R. L. Hartman

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Room Temperature Operation

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Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Semiconductors ◽

10.1134/1.1582546 ◽

2003 ◽

Vol 37 (6) ◽

pp. 736-739

Author(s):

S. V. Ivanov ◽

K. D. Moiseev ◽

V. A. Kaigorodov ◽

V. A. Solov’ev ◽

S. V. Sorokin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Injection Laser ◽

Mid Infrared ◽

Double Heterostructure

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Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2192535 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1626 ◽

Cited By ~ 3

Author(s):

Bernard Wernsman ◽

Thomas Bird ◽

Michael Sheldon ◽

Samuel Link ◽

Rebecca Wehrer

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

P Type

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Summary Abstract: Hot-electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584387 ◽

1988 ◽

Vol 6 (2) ◽

pp. 674 ◽

Cited By ~ 3

Author(s):

T. H. Chiu

Keyword(s):

Electron Transport ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Hot Electron ◽

Double Heterostructure ◽

Hot Electron Transport

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HgCdTe double heterostructure injection laser grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.106332 ◽

1991 ◽

Vol 59 (9) ◽

pp. 1022-1024 ◽

Cited By ~ 57

Author(s):

M. Zandian ◽

J. M. Arias ◽

R. Zucca ◽

R. V. Gil ◽

S. H. Shin

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Injection Laser ◽

Double Heterostructure

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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:19800053 ◽

1980 ◽

Vol 16 (2) ◽

pp. 72 ◽

Cited By ~ 32

Author(s):

A.Y. Cho ◽

H.C. Casey ◽

C. Radice ◽

P.W. Foy

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Growth Conditions ◽

Threshold Current Density ◽

Double Heterostructure

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cw electro‐optical characteristics and preliminary reliability of double‐heterostructure GaAs‐AlxGa1−xAs lasers grown by molecular beam epitaxy

The preparation of low current-threshold infra-red-visible (0.89-0.72&#181;m) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy

IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

Summary Abstract: Hot-electron transport in the AlSb/InAs/GaSb double heterostructure prepared by molecular-beam epitaxy

HgCdTe double heterostructure injection laser grown by molecular beam epitaxy

Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

The preparation of low current-threshold infra-red-visible (0.89-0.72µm) AlxGa1-xAs/AlyGa1-yAs double-heterostructure lasers by molecular beam epitaxy