Interfacial layer formation in the sputter‐deposited SiO2/GaAs system

1980 ◽  
Vol 37 (9) ◽  
pp. 835-837 ◽  
Author(s):  
Toshitaka Torikai ◽  
Kenji Endo
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
Sputter Deposited

Effect of inner oxygen on the interfacial layer formation for HfO2 gate dielectric

2007 ◽  
Vol 42 (17) ◽  
pp. 7343-7347 ◽  
Author(s):  
Ran Jiang ◽  
E. Q. Xie ◽  
Z. F. Wang
Keyword(s):  
Interfacial Layer ◽  
Gate Dielectric ◽  
Layer Formation

scholarly journals Anode interfacial layer formation via reductive ethyl detaching of organic iodide in lithium–oxygen batteries

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Xiao-Ping Zhang ◽  
Yi-Yang Sun ◽  
Zhuang Sun ◽  
Chu-Shu Yang ◽  
Tao Zhang
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
Lithium Oxygen Batteries

High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack

2020 ◽  
Vol 223 ◽  
pp. 111219 ◽  
Author(s):  
S. Siddiqui ◽  
R. Galatage ◽  
W. Zhao ◽  
G. Raja Muthinti ◽  
J. Fronheiser ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
Metal Gate ◽  
Gate Stack ◽  
High Quality ◽  
High K

Design of High-k Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing Method

2019 ◽  
Vol 19 (2) ◽  
pp. 129-143 ◽  
Author(s):  
Arito Ogawa ◽  
Kunihiko Iwamoto ◽  
Hiroyuki Ota ◽  
Masashi Takahashi ◽  
Akito Hirano ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
High K ◽  
Annealing Method

Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 437-440 ◽  
Author(s):  
Christian Strenger ◽  
Volker Haeublein ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Heiner Ryssel ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Interfacial Layer ◽  
Chemical Properties ◽  
Microstructural Properties ◽  
Layer Formation ◽  
Carbon Distribution ◽  
Transmission Electron ◽  
Inversion Channel ◽  
P Type ◽  
And Chemical Properties

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

Kinetics of interfacial layer formation during deposition of HfO2 on silicon

2004 ◽  
Vol 450 (1) ◽  
pp. 111-113 ◽  
Author(s):  
C Essary ◽  
J.M Howard ◽  
V Craciun ◽  
D Craciun ◽  
R.K Singh
Keyword(s):  
Interfacial Layer ◽  
Layer Formation ◽  
Kinetics Of

Characterization of Cu-Al alloy/SiO2 interface microstructure

2000 ◽  
Vol 615 ◽  
Author(s):  
Pei-I Wang ◽  
S. P. Murarka ◽  
G.-R. Yang ◽  
E. Barnat ◽  
T.-M. Lu ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Alloy Film ◽  
Al Alloy ◽  
X Ray Diffraction ◽  
Adhesion Promoter ◽  
Adhesion Promoters ◽  
Barrier Formation ◽  
Transmission Electron ◽  
Before And After ◽  
Sputter Deposited

ABSTRACTCu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. This approach to barrier formation is to generate an ultra-thin interfacial layer through Cu alloying without significantly affecting the resistivity of Cu. In this paper the microstructure of the bilayers of Cu/Cu-5 at%Al and Cu-5 at%Al/Cu sputter deposited on SiO2 before and after thermal annealing is investigated by transmission electron microscopy (TEM). Interfacial layer is observed in both cases. The variation of the resistance of the Cu-Al alloy film is consistent with its microstructure. The x-ray diffraction (XRD) spectra of Cu-5 at%Al on SiO2 shows that the addition of Al into Cu intends to favor the Cu (111) texture. These results will be presented and discussed showing that films of Cu doped with Al appear to act as a suitable barrier and adhesion promoter between SiO2 and Cu.

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