Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates

1980 ◽  
Vol 37 (6) ◽  
pp. 538-540 ◽  
Author(s):  
Chin‐An Chang ◽  
C. M. Serrano ◽  
L. L. Chang ◽  
L. Esaki
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Transmission Electron Microscope ◽  
Molecular Beam ◽  
Cross Sectional ◽  
Gaas Substrates ◽  
Transmission Electron

scholarly journals Molecular Beam Epitaxy of Germanium in the Atomic-Resolution Transmission Electron Microscope

2019 ◽  
Vol 25 (S1) ◽  
pp. 47-48
Author(s):  
Éric Ngo ◽  
Federico Panciera ◽  
Jean-Christophe Harmand ◽  
Weixi Wang ◽  
Martin Foldyna ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Transmission Electron Microscope ◽  
Molecular Beam ◽  
Atomic Resolution ◽  
Transmission Electron

The Role of Hydrogen in Silicon Microcrystallization

1989 ◽  
Vol 164 ◽  
Author(s):  
S. Wagner ◽  
S.H. Wolff ◽  
J.M. Gibson
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Grain Boundary ◽  
Molecular Beam ◽  
Boundary Energy ◽  
Substantial Reduction ◽  
Grain Boundary Energy ◽  
Transmission Electron ◽  
Crystallization Experiments

AbstractWe report and interpret two groups of experiments on the role that hydrogen plays in the formation of silicon microcrystals. We show that the growth of singlecrystal Si by molecular beam epitaxy at 475°C is disrupted by H2, which induces the formation of microcrystals. In crystallization experiments of non-hydrogenated a-Si and of hydrogenated a-Si:H on a hot stage in a transmission electron microscope, hydrogen facilitates the nucleation of crystallites. We explain our observations with a substantial reduction of the grain boundary energy by hydrogen.

Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 794 ◽  
Author(s):  
Brian P. Gorman ◽  
Andrew G. Norman ◽  
Reiko Lukic-Zrnic ◽  
Terry D. Golding ◽  
Chris L. Littler
Keyword(s):  
Raman Spectroscopy ◽  
Fourier Transform ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Energy Gap ◽  
Atomic Ordering ◽  
Substrate Orientation ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTSpontaneous atomic ordering is investigated in a series of GaAs1−xSbx epilayers (0.51 < x < 0.71) grown by molecular beam epitaxy (MBE) on GaAs substrates with surface orientations of (001), (001) – 8° toward (111)A, (001) – 8° toward (111)B, (115)A, (115)B, (113)A, and (113)B. Atomic ordering in these epilayers was observed from a decrease in the energy gap measured by Fourier transform infrared (FTIR) absorption spectroscopy and corroborated by superlattice reflections in transmission electron diffraction and Raman spectroscopy. Contrary to previous investigations of ordering in III-V alloys, a marked energy gap reduction corresponding to CuPt-B type ordering is observed in the GaAs1−xSbx grown on (111)A-type orientations.

Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2561-2564 ◽  
Author(s):  
Satoshi Ikeda ◽  
Masao Okihara ◽  
Hidetsugu Uchida ◽  
Norio Hirashita
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sectional ◽  
Gate Oxides ◽  
Transmission Electron
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