Effect of growth terraces on threshold current density of (GaAl)As double‐heterostructure laser

K. Shima; K. Segi; H. Imai; T. Fujiwara; M. Takusagawa

doi:10.1063/1.91940

Effect of growth terraces on threshold current density of (GaAl)As double‐heterostructure laser

Applied Physics Letters ◽

10.1063/1.91940 ◽

1980 ◽

Vol 37 (4) ◽

pp. 341-343 ◽

Cited By ~ 2

Author(s):

K. Shima ◽

K. Segi ◽

H. Imai ◽

T. Fujiwara ◽

M. Takusagawa

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Heterostructure Laser

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Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

Electronics Letters ◽

10.1049/el:19870632 ◽

1987 ◽

Vol 23 (17) ◽

pp. 894 ◽

Cited By ~ 12

Author(s):

K. Nakano ◽

M. Ikeda ◽

A. Toda ◽

C. Kojima

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Heterostructure Laser ◽

Low Threshold

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Threshold Current Density and Lasing Transverse Mode in a GaAs-AlxGa1-xAs Double Heterostructure Laser

Japanese Journal of Applied Physics ◽

10.1143/jjap.12.1593 ◽

1973 ◽

Vol 12 (10) ◽

pp. 1593-1599 ◽

Cited By ~ 4

Author(s):

Hiroo Yonezu ◽

Kohroh Kobayashi ◽

Isamu Sakuma

Keyword(s):

Current Density ◽

Transverse Mode ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Heterostructure Laser

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Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers

Applied Physics Letters ◽

10.1063/1.103891 ◽

1990 ◽

Vol 57 (22) ◽

pp. 2291-2293 ◽

Cited By ~ 18

Author(s):

S. H. Hagen ◽

A. Valster ◽

M. J. B. Boermans ◽

J. van der Heyden

Keyword(s):

Temperature Dependence ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure

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Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.1795 ◽

1979 ◽

Vol 18 (9) ◽

pp. 1795-1805 ◽

Cited By ~ 44

Author(s):

Yoshio Itaya ◽

Yasuharu Suematsu ◽

Shinya Katayama ◽

Katsumi Kishino ◽

Shigehisa Arai

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Low Threshold

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Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4(λ=1.3 μm) double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.334226 ◽

1984 ◽

Vol 56 (7) ◽

pp. 1959-1964 ◽

Cited By ~ 34

Author(s):

H. C. Casey

Keyword(s):

Temperature Dependence ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure

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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:19800053 ◽

1980 ◽

Vol 16 (2) ◽

pp. 72 ◽

Cited By ~ 32

Author(s):

A.Y. Cho ◽

H.C. Casey ◽

C. Radice ◽

P.W. Foy

Keyword(s):

Molecular Beam Epitaxy ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Growth Conditions ◽

Threshold Current Density ◽

Double Heterostructure

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Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers

10.1109/islc.1990.764416 ◽

2005 ◽

Cited By ~ 1

Author(s):

S.H. Hagen ◽

A. Valster ◽

M.J.B. Boermans ◽

J. van der Heyden ◽

G. Acket

Keyword(s):

Temperature Dependence ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure

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Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 at 300 K)

Electronics Letters ◽

10.1049/el:19840388 ◽

1984 ◽

Vol 20 (13) ◽

pp. 559 ◽

Cited By ~ 1

Author(s):

A.E. Drakin ◽

P.G. Eliseev ◽

B.N. Sverdlov ◽

L.M. Dolginov ◽

E.G. Shevchenko

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Low Threshold ◽

Injection Lasers ◽

Layer Waveguide

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Observation of stripe‐direction dependence of threshold current density for AlGaInP laser diodes with CuPt‐type natural superlattice in Ga0.5In0.5P active layer

Applied Physics Letters ◽

10.1063/1.107782 ◽

1992 ◽

Vol 61 (7) ◽

pp. 737-739 ◽

Cited By ~ 25

Author(s):

H. Fujii ◽

Y. Ueno ◽

A. Gomyo ◽

K. Endo ◽

T. Suzuki

Keyword(s):

Active Layer ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Natural Superlattice ◽

Direction Dependence

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