Near‐field and beam‐waist position of the semiconductor laser with a channeled‐substrate planar structure

1980 ◽  
Vol 37 (3) ◽  
pp. 257-260 ◽  
Author(s):  
Chung‐Yih Chen ◽  
Shyh Wang
Keyword(s):  
Semiconductor Laser ◽  
Near Field ◽  
Beam Waist ◽  
Planar Structure

Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste

2012 ◽  
Vol 134 (4) ◽  
Author(s):  
Yi Yan ◽  
Xu Chen ◽  
Xingsheng Liu ◽  
Yunhui Mei ◽  
Guo-Quan Lu
Keyword(s):  
Semiconductor Laser ◽  
High Power ◽  
Near Field ◽  
Laser Diodes ◽  
Acoustic Microscopy ◽  
High Power Laser ◽  
Power Laser ◽  
Power Semiconductor ◽  
Die Bonding ◽  
Nanosilver Paste

Conduction-cooled high power laser diodes have a variety of significant commercial, industrial, and military applications. For these devices to perform effectively, an appropriate die-attached material meeting specific requirements must be selected. In this study, nanosilver paste, a novel die-attached material, was used in packaging the 60 W 808 nm high power laser diodes. The properties of the laser diodes operating in the continuous wave (CW) mode, including the characteristics of power–current–voltage (LIV), spectrum, near field, far field, near field linearity, spatial spectrum, and thermal impedance, were determined. In addition, destructive tests, including the die shear test, scanning acoustic microscopy, and the thermal rollover test, were conducted to evaluate the reliability of the die bonding of the 60 W 808 nm high power semiconductor laser with nanosilver paste. Thermal analyses of the laser diodes operating at CW mode with different die-attached materials, indium solder, gold–tin solder and nanosilver paste, were conducted by finite element analysis (FEA). According to the result of the FEA, the nanosilver paste resulted in the lowest temperature in the laser diodes. The test results showed that the nanosilver paste was a very promising die-attached material in packaging high power semiconductor laser.

Direct De-Ionized Water-Cooled Semiconductor Laser Package for Photodynamic Therapy of Esophageal Carcinoma: Design and Analysis

2009 ◽  
Vol 131 (2) ◽  
Author(s):  
Gemunu Happawana ◽  
Amaranath Premasiri ◽  
Arye Rosen
Keyword(s):  
Photodynamic Therapy ◽  
Semiconductor Laser ◽  
Near Field ◽  
Optical Power ◽  
Water Cooling ◽  
Internal Organs ◽  
Package Design ◽  
Effective Delivery ◽  
Current Characteristics ◽  
Esophageal Carcinomas

Effective delivery of the activation light for photodynamic therapy (PDT) of internal organs is a challenge. In this paper, we present a direct de-ionized water-cooling semiconductor laser package design for PDT of esophageal carcinomas. This self-sustained photonic light delivery system is designed to provide the correct amount of light dose for optimal treatment. The direct de-ionized water-cooling technique discussed in this paper not only removes heat efficiently but also results in a high optical power output. Voltage-current and power-current characteristics, and near field optical patterns for unidirectional and direct de-ionized water-cooling, are used to show the validity of the technique. Modeling of fluid flow is conducted to investigate the effect of flowing water over the laser package.

Near‐field and far‐field patterns of phase‐locked semiconductor laser arrays

1983 ◽  
Vol 42 (6) ◽  
pp. 495-497 ◽  
Author(s):  
D. R. Scifres ◽  
W. Streifer ◽  
R. D. Burnham ◽  
T. L. Paoli ◽  
C. Lindström
Keyword(s):  
Semiconductor Laser ◽  
Near Field ◽  
Far Field ◽  
Laser Arrays ◽  
Field Patterns ◽  
Semiconductor Laser Arrays

Near field wavefront measurements of semiconductor laser arrays by shearing interferometry

1990 ◽  
Vol 29 (18) ◽  
pp. 2701 ◽  
Author(s):  
Chung-Pin Cherng ◽  
Theodore C. Salvi ◽  
Marek Osiński ◽  
John G. McInerney
Keyword(s):  
Semiconductor Laser ◽  
Near Field ◽  
Laser Arrays ◽  
Shearing Interferometry ◽  
Semiconductor Laser Arrays

Stable broad near-field (single-lateral mode) semiconductor laser

1991 ◽  
Author(s):  
Soo-Jin Chua ◽  
Simon K. Leow ◽  
T. B. Ng ◽  
Tow Chong Chong ◽  
R. Kanhere
Keyword(s):  
Semiconductor Laser ◽  
Near Field ◽  
Lateral Mode
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