Electro‐optic frequency‐ and polarization‐modulated injection laser

1980 ◽  
Vol 36 (12) ◽  
pp. 954-957 ◽  
Author(s):  
F. K. Reinhart ◽  
R. A. Logan
Keyword(s):  
Injection Laser ◽  
Electro Optic

Addendum: Noncontact electro-optic sampling with a GaAs injection laser

1986 ◽  
Vol 22 (19) ◽  
pp. 1032 ◽  
Author(s):  
J. Nees ◽  
G. Mourou
Keyword(s):  
Injection Laser ◽  
Electro Optic

Electro-optic sampling of fast electrical signals using an InGaAsP injection laser

1986 ◽  
Vol 22 (2) ◽  
pp. 61 ◽  
Author(s):  
A.J. Taylor ◽  
J.M. Wiesenfeld ◽  
G. Eisenstein ◽  
R.S. Tucker ◽  
J.R. Talman ◽  
...  
Keyword(s):  
Injection Laser ◽  
Electrical Signals ◽  
Electro Optic

Noncontact electro-optic sampling with a GaAs injection laser

1986 ◽  
Vol 22 (17) ◽  
pp. 918 ◽  
Author(s):  
J. Nees ◽  
G. Mourou
Keyword(s):  
Injection Laser ◽  
Electro Optic

High Repetition Rate Electro-Optic Sampling with an Injection Laser

1986 ◽  
pp. 114-116
Author(s):  
A. J. Taylor ◽  
R. S. Tucker ◽  
J. M. Wiesenfeld ◽  
G. Eisenstein ◽  
C. A. Burrus
Keyword(s):  
Repetition Rate ◽  
High Repetition Rate ◽  
Injection Laser ◽  
High Repetition ◽  
Electro Optic

Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser

1986 ◽  
Vol 22 (20) ◽  
pp. 1068 ◽  
Author(s):  
A.J. Taylor ◽  
R.S. Tucker ◽  
J.M. Wiesenfeld ◽  
C.A. Burrus ◽  
G. Eisenstein ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Injection Laser ◽  
Electro Optic

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

Temperature Measurement in Laminar Free Convection Using Electro-Optic Holography

1997 ◽  
Vol 7 (9) ◽  
pp. 1893-1898 ◽  
Author(s):  
G. Schirripa Spagnolo ◽  
D. Ambrosini ◽  
A. Ponticiello ◽  
D. Paoletti
Keyword(s):  
Free Convection ◽  
Temperature Measurement ◽  
Electro Optic
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