Direct electro-optic sampling of a GaAs integrated circuit using a gain-switched InGaAsP injection laser

1986 ◽  
Vol 22 (20) ◽  
pp. 1068 ◽  
Author(s):  
A.J. Taylor ◽  
R.S. Tucker ◽  
J.M. Wiesenfeld ◽  
C.A. Burrus ◽  
G. Eisenstein ◽  
...  
1999 ◽  
Vol 574 ◽  
Author(s):  
Norifumi Fujimura ◽  
Tamaki Shimura ◽  
Toshifumi Wakano ◽  
Atsushi Ashida ◽  
Taichiro Ito

AbstractWe propose the application of ZnO:X (X = Li, Mg, N, In, Al, Mn, Gd, Yb etc.) films for a monolithic Optical Integrated Circuit (OIC). Since ZnO exhibits excellent piezoelectric effect and has also electro-optic and nonlinear optic effects and the thin films are easily obtained, it has been studied as one of the important thin film wave guide materials especially for an acoustooptic device[1]. In terms of electro-optic and nonlinear optic effects, however, LiNbO3 or LiTaO3 is superior to ZnO. The most important issue of thin film waveguide using such ferroelectrics is optical losses at the film/substrate interface and the film surface, because the process window to control the surface morphology is very narrow due to their high deposition temperature. Since ZnO can be grown at extremely low temperature, the roughness at the surface and the interface is expected to be minimized. This is the absolute requirement especially for waveguide using a blue or ultraviolet laser. Recently, lasing at the wavelength of ultraviolet, ferroelectric and antiferromagnetic behaviors of ZnO doped with various exotic elements (exotic doping) have been reported. This paper discusses the OIC application of ZnO thin films doped with exotic elements.


1986 ◽  
Vol 22 (19) ◽  
pp. 1032 ◽  
Author(s):  
J. Nees ◽  
G. Mourou

1986 ◽  
Vol 22 (2) ◽  
pp. 61 ◽  
Author(s):  
A.J. Taylor ◽  
J.M. Wiesenfeld ◽  
G. Eisenstein ◽  
R.S. Tucker ◽  
J.R. Talman ◽  
...  

1990 ◽  
Vol 12 (1-4) ◽  
pp. 369-379 ◽  
Author(s):  
J.F. Whitaker ◽  
J.A. Valdmanis ◽  
M.Y. Frankel ◽  
S. Gupta ◽  
J.M. Chwalek ◽  
...  

MRS Bulletin ◽  
1987 ◽  
Vol 12 (7) ◽  
pp. 47-53
Author(s):  
Walter A. Schulze ◽  
Turuvekere R. Gururaja

The growth of integrated circuit applications has been a strong influence in the expansion of markets for ferroelectric ceramics. Ferroelectrics perform three major functions in circuits:1. They store energy with a high volume efficiency,2. They have very useful large changes in impedance with frequency, and3. They transduce between various energy forms and electrical signals.For many years commercial ferroelectric ceramics have been dominated by the barium titanate and lead zirconate titanate (PZT) systems. A tremendous research effort has been dedicated to these systems with very interesting studies still progressing on basic understanding, reproducibility, and modifications to utilize inexpensive electrodes. Processing studies are also seeking to reduce the size of devices and develop new transducing and sensing applications. The need to reduce cost and to fulfill specific applications is creating demands for new materials. Much of this effort has centered on lead-based systems referred to as relaxor ferroelectrics.The areas of application of ferroelectrics are narrowed in this review by eliminating the interfacial (grain-grain boundary) devices and electro-optic applications discussed in “Electronic Ceramic Thin Films” by Bruce Tuttle in this issue. Also, this article can only cover a small fraction of the information indicated by the title.


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