High‐resolution scanning electron‐beam annealing of ion‐implanted silicon

1979 ◽  
Vol 35 (6) ◽  
pp. 463-466 ◽  
Author(s):  
K. N. Ratnakumar ◽  
R. F. W. Pease ◽  
D. J. Bartelink ◽  
N. M. Johnson ◽  
J. D. Meindl
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Scanning Electron Beam ◽  
Scanning Electron ◽  
Ion Implanted

Scanning-electron-beam annealing of ion-implanted p-n junction diodes

1979 ◽  
Vol 15 (14) ◽  
pp. 433 ◽  
Author(s):  
R.A. McMahon ◽  
H. Ahmed ◽  
J.D. Speight ◽  
R.M. Dobson
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Scanning Electron ◽  
Ion Implanted

Scanning Electron Beam Annealing of P-Ion-Implanted Si(100) and (111) Substrates

1984 ◽  
Vol 23 (Part 1, No. 8) ◽  
pp. 1065-1069 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Kunihiro Suzuki
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Scanning Electron ◽  
Ion Implanted

High speed scanning electron beam annealing of ion-implanted silicon layers

1980 ◽  
Vol 73 (1) ◽  
pp. 221-226 ◽  
Author(s):  
S. Schiller ◽  
S. Panzer ◽  
R. Klabes
Keyword(s):  
Electron Beam ◽  
High Speed ◽  
Scanning Electron Beam ◽  
Scanning Electron ◽  
Ion Implanted

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Automatic pattern positioning of scanning electron beam exposure

1970 ◽  
Vol 17 (6) ◽  
pp. 450-457 ◽  
Author(s):  
S. Miyauchi ◽  
K. Tanaka ◽  
J.C. Russ
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Scanning Electron

Investigation of scanning electron beam parameters in terms of the disk-charged approximation for the sample potential

Optik ◽  
2016 ◽  
Vol 127 (17) ◽  
pp. 6978-6981 ◽  
Author(s):  
Hassan N. Al-Obaidi ◽  
Musatfa M. Abid ◽  
Wasan J. Kadhem
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Beam Parameters ◽  
Scanning Electron

A dual-pulse scanning electron beam annealer

1987 ◽  
Vol 20 (7) ◽  
pp. 901-905 ◽  
Author(s):  
M J Hart ◽  
A G R Evans ◽  
N K Bartlett
Keyword(s):  
Electron Beam ◽  
Scanning Electron Beam ◽  
Scanning Electron
Sign in / Sign up

Export Citation Format

Share Document