Pulsed‐electron‐beam annealing of polycrystalline‐silicon films

1979 ◽  
Vol 35 (3) ◽  
pp. 282-285 ◽  
Author(s):  
T. I. Kamins ◽  
A. C. Greenwald
Keyword(s):  
Electron Beam ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Pulsed Electron Beam ◽  
Polycrystalline Silicon Films

Microcrystalline and polycrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method

2003 ◽  
Vol 150 (4) ◽  
pp. 293 ◽  
Author(s):  
R. Bilyalov ◽  
J. Poortmans ◽  
R. Sharafutdinov ◽  
S. Khmel ◽  
V. Schukin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Gas Jet ◽  
Polycrystalline Silicon Films

Grain growth of polycrystalline silicon films on SiO2by cw scanning electron beam annealing

1981 ◽  
Vol 39 (8) ◽  
pp. 645-647 ◽  
Author(s):  
Kenji Shibata ◽  
Tomoyasu Inoue ◽  
Tadahiro Takigawa ◽  
Shintaro Yoshii
Keyword(s):  
Electron Beam ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Scanning Electron Beam ◽  
Polycrystalline Silicon Films ◽  
Scanning Electron

Study on the Microstructure of Polycrystalline Silicon Films Treated with Line Shaped Electron Beam

2007 ◽  
Vol 544-545 ◽  
pp. 471-474
Author(s):  
L. Fu ◽  
F. Gromball ◽  
J. Müller
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Capping Layer ◽  
Silicon Melt ◽  
Polycrystalline Silicon Films

Line shaped electron beam was used for the recrystallization of nanocrystalline silicon layer that had been deposited on the low cost borosilicate glass-substrate in this paper. Polycrystalline silicon films of a 20μm thickness, which are the base for a solar cell absorber, have been investigated. Tungstendisilicide (WSi2) was formed at the tungsten/silicon interface as well as grain boundaries of the silicon. WSi2 improved the wetting and adhesion of the silicon melt. The surface morphology of the film was strongly influenced by the recrystallization energy density applied. Low energy density resulted in non wetted WSi2/W areas due to the reaction between the silicon melt and the tungsten. With the increased energy, the capping layer become smooth and continuous due to the pinholes becomes fewer and smaller. Excess of the energy density led to larger voids in the capping layer, more WSi2/Si eutectic crystallites, a thinner tungsten layer, and a thicker tungstendisilicide layer.

Pulsed Electron Beam Processing of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Anton C. Greenwald ◽  
Roger G. Little ◽  
Mark B. Spitzer ◽  
Robert G. Wolfson
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Silicon Substrates ◽  
Dopant Activation ◽  
Pulsed Electron Beam ◽  
Silicon Material ◽  
Electron Beam Processing

ABSTRACTContinued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.

Recrystallization of polycrystalline silicon films on ceramics by electron beam

1997 ◽  
Vol 48 (1-4) ◽  
pp. 327-333 ◽  
Author(s):  
Tetsuo Takahashi ◽  
Ryuichi Shimokawa ◽  
Yasuhiro Matsumoto ◽  
Kenichi Ishii ◽  
Toshihiro Sekigawa
Keyword(s):  
Electron Beam ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
Sign in / Sign up

Export Citation Format

Share Document