Influence of the energy density on the structure and morphology of polycrystalline silicon films treated with electron beam

2007 ◽  
Vol 136 (1) ◽  
pp. 87-91 ◽  
Author(s):  
L. Fu ◽  
F. Gromball ◽  
C. Groth ◽  
K. Ong ◽  
N. Linke ◽  
...  
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Structure And Morphology ◽  
Polycrystalline Silicon Films

Study on the Microstructure of Polycrystalline Silicon Films Treated with Line Shaped Electron Beam

2007 ◽  
Vol 544-545 ◽  
pp. 471-474
Author(s):  
L. Fu ◽  
F. Gromball ◽  
J. Müller
Keyword(s):  
Electron Beam ◽  
Energy Density ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Capping Layer ◽  
Silicon Melt ◽  
Polycrystalline Silicon Films

Line shaped electron beam was used for the recrystallization of nanocrystalline silicon layer that had been deposited on the low cost borosilicate glass-substrate in this paper. Polycrystalline silicon films of a 20μm thickness, which are the base for a solar cell absorber, have been investigated. Tungstendisilicide (WSi2) was formed at the tungsten/silicon interface as well as grain boundaries of the silicon. WSi2 improved the wetting and adhesion of the silicon melt. The surface morphology of the film was strongly influenced by the recrystallization energy density applied. Low energy density resulted in non wetted WSi2/W areas due to the reaction between the silicon melt and the tungsten. With the increased energy, the capping layer become smooth and continuous due to the pinholes becomes fewer and smaller. Excess of the energy density led to larger voids in the capping layer, more WSi2/Si eutectic crystallites, a thinner tungsten layer, and a thicker tungstendisilicide layer.

Microcrystalline and polycrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method

2003 ◽  
Vol 150 (4) ◽  
pp. 293 ◽  
Author(s):  
R. Bilyalov ◽  
J. Poortmans ◽  
R. Sharafutdinov ◽  
S. Khmel ◽  
V. Schukin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Gas Jet ◽  
Polycrystalline Silicon Films

Grain growth of polycrystalline silicon films on SiO2by cw scanning electron beam annealing

1981 ◽  
Vol 39 (8) ◽  
pp. 645-647 ◽  
Author(s):  
Kenji Shibata ◽  
Tomoyasu Inoue ◽  
Tadahiro Takigawa ◽  
Shintaro Yoshii
Keyword(s):  
Electron Beam ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Scanning Electron Beam ◽  
Polycrystalline Silicon Films ◽  
Scanning Electron

Recrystallization of polycrystalline silicon films on ceramics by electron beam

1997 ◽  
Vol 48 (1-4) ◽  
pp. 327-333 ◽  
Author(s):  
Tetsuo Takahashi ◽  
Ryuichi Shimokawa ◽  
Yasuhiro Matsumoto ◽  
Kenichi Ishii ◽  
Toshihiro Sekigawa
Keyword(s):  
Electron Beam ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

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