scholarly journals Time‐resolved reflectivity of ion‐implanted silicon during laser annealing

1978 ◽  
Vol 33 (5) ◽  
pp. 437-440 ◽  
Author(s):  
D. H. Auston ◽  
C. M. Surko ◽  
T. N. C. Venkatesan ◽  
R. E. Slusher ◽  
J. A. Golovchenko
Keyword(s):  
Laser Annealing ◽  
Time Resolved ◽  
Ion Implanted

Calculations Pertaining to Raman Scattering During Laser Annealing of Ion-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. F. Wood ◽  
D. H. Lowndes ◽  
G. E. Giles
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Rapid Onset ◽  
Simultaneous Occurrence ◽  
Raman Signal ◽  
Molten Silicon ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Ion Implanted

ABSTRACTCompaan and co-workers have reported the results of time-resolved optical experiments on ion-implanted silicon which they claim prove the melting model of pulsed laser annealing cannot be correct. These results concern the rapid onset of a Raman signal after a heating laser pulse, the simultaneous occurrence of a Raman signal and the high reflectivity phase characteristic of molten silicon, and the lattice temperature measured by the Raman Stokes/anti-Stokes intensity ratio. In this paper, we show by detailed numerical calculations with the melting model that there is, in fact, excellent agreement between the results of the calculations and the experimental results reported by Compaan and co-workers.

Dynamic Behavior of Nano Second Pulsed Nd:Glass Laser Annealing in Ion Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
M. Takai ◽  
Y. Sato ◽  
K. Murakami ◽  
K. Gamo ◽  
T. Minamisono ◽  
...  
Keyword(s):  
Light Intensity ◽  
Dynamic Behavior ◽  
Laser Annealing ◽  
Laser Energy ◽  
Transmitted Light ◽  
Time Resolved ◽  
Dynamic Behaviors ◽  
Transient Measurements ◽  
Nd:Glass Laser ◽  
Ion Implanted

ABSTRACTTime resolved transmission (λ = 1060 nm) and reflectivity (λ = 632.8 nm) during 20 nsec Nd:glass laser annealing in ion implanted Si were measured to study dynamic behaviors of laser annealing. Transmitted laser energy was also measured to complement transient measurements. Transient transmitted light intensity was found to be almost completely quenched as would be expected from absorption by a molten Si layer.

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

scholarly journals Pulsed Laser Annealing of Ion Implanted Si

1979 ◽  
Vol 7 (2) ◽  
pp. 152-160
Author(s):  
Kouichi MURAKAMI ◽  
Eiji IKAWA ◽  
A. H. ORABY ◽  
Kenji GAMO ◽  
Susumu NAMBA ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ion Implanted

Extended defects in ion-implanted si during nanosecond laser annealing

2014 ◽  
Author(s):  
F. Cristiano ◽  
Y. Qiu ◽  
E. Bedel-Pereira ◽  
K. Huet ◽  
F. Mazzamuto ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Nanosecond Laser ◽  
Extended Defects ◽  
Ion Implanted

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

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