Grain size dependence in a self‐implanted silicon layer on laser irradiation energy density

1978 ◽  
Vol 32 (12) ◽  
pp. 824-826 ◽  
Author(s):  
W. F. Tseng ◽  
J. W. Mayer ◽  
S. U. Campisano ◽  
G. Foti ◽  
E. Rimini
Keyword(s):  
Grain Size ◽  
Energy Density ◽  
Laser Irradiation ◽  
Size Dependence ◽  
Silicon Layer ◽  
Irradiation Energy ◽  
Irradiation Energy Density

Effects of laser irradiation energy density on the properties of pulsed laser deposited ITO thin films

2005 ◽  
Vol 81 (5) ◽  
pp. 953-957 ◽  
Author(s):  
F.O. Adurodija ◽  
R. Brüning ◽  
I.O. Asia ◽  
H. Izumi ◽  
T. Ishihara ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Irradiation Energy ◽  
Ito Thin Films ◽  
Irradiation Energy Density

Size-Dependence of Photoluminescence Property of ZnO Nanoparticles

2014 ◽  
Vol 887-888 ◽  
pp. 143-146 ◽  
Author(s):  
Xiao Fang Wang ◽  
Yun Liang Fang ◽  
Tian Le Li ◽  
Fu Juan Wang
Keyword(s):  
Grain Size ◽  
Lower Energy ◽  
Size Dependence ◽  
Surface States ◽  
Photoluminescence Property ◽  
Precipitation Method ◽  
Pl Spectra ◽  
Broadband Emission ◽  
Band Emission ◽  
20 Nm

Nanometer-sized ZnO crystals with the diameter from 20 nm to 110 nm were prepared by homogenous precipitation method (HPM). The photoluminescence (PL) spectra of as-prepared nanoparticles under excitation at the wavelength of 320 nm were detected. The PL spectra were fitted with Gaussian curves, in which a good fitting consisting of six Gaussian peaks was obtained. We observed that the multi-peak centers do not change much, while the relative amplitude of Gaussian combination to the band-to-band emission decreases rapidly with the increased grain size. It shows that the broadband emission at the lower energy is associated with the surface states.

scholarly journals Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Laser Irradiation ◽  
Nonlinear Coefficient ◽  
Acceptor State ◽  
Xrd Pattern ◽  
Electrical Studies ◽  
Structural And Electrical Properties

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

The grain size dependence of flow stress in a Cu–26Ni–17Zn alloy

2000 ◽  
Vol 48 (8) ◽  
pp. 1807-1813 ◽  
Author(s):  
S. Nagarjuna ◽  
M. Srinivas ◽  
K.K. Sharma
Keyword(s):  
Grain Size ◽  
Flow Stress ◽  
Size Dependence

Grain size dependence of saturation deformation behaviour of SS 316 at 1123 K

1987 ◽  
Vol 3 (12) ◽  
pp. 1025-1028 ◽  
Author(s):  
S. K. Ray ◽  
K. G. Samuel ◽  
S. L. Mannan ◽  
P. Rodriguez
Keyword(s):  
Grain Size ◽  
Size Dependence ◽  
Deformation Behaviour

Grain size dependence of tensile properties in nanocrystalline diamond

2019 ◽  
Vol 157 ◽  
pp. 67-74 ◽  
Author(s):  
Cheng Huang ◽  
Xianghe Peng ◽  
Bo Yang ◽  
Shayuan Weng ◽  
Yinbo Zhao ◽  
...  
Keyword(s):  
Grain Size ◽  
Tensile Properties ◽  
Size Dependence ◽  
Nanocrystalline Diamond
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