Low‐noise millimeter‐wave mixer diodes prepared by molecular beam epitaxy (MBE)

1977 ◽  
Vol 31 (3) ◽  
pp. 219-221 ◽  
Author(s):  
M. V. Schneider ◽  
R. A. Linke ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Millimeter Wave ◽  
Molecular Beam ◽  
Low Noise

IVA-8 60-GHz GaAs low-noise MESFET's by molecular-beam epitaxy

1986 ◽  
Vol 33 (11) ◽  
pp. 1852-1853 ◽  
Author(s):  
P.C. Chao ◽  
P.M. Smith ◽  
K.H.G. Duh ◽  
J.C.M. Hwang
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Noise ◽  
60 Ghz

Low‐noise GaAs field‐effect transistor made by molecular beam epitaxy

1982 ◽  
Vol 41 (7) ◽  
pp. 633-635 ◽  
Author(s):  
M. Feng ◽  
V. K. Eu ◽  
I. J. D’Haenens ◽  
M. Braunstein
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
Low Noise ◽  
Effect Transistor

Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy

2003 ◽  
Author(s):  
P. Ho ◽  
P.C. Chao ◽  
K.H.G. Duh ◽  
A.A. Jabra ◽  
J.M. Ballingall ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Gain ◽  
Low Noise

Low‐noise GaAs field‐effect transistors prepared by molecular beam epitaxy

1981 ◽  
Vol 39 (7) ◽  
pp. 566-569 ◽  
Author(s):  
M. Omori ◽  
T. J. Drummond ◽  
H. Morkoç
Keyword(s):  
Molecular Beam Epitaxy ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistors ◽  
Low Noise
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