Impact ionization rates for electrons and holes in GaAs1−xSbxalloys

1976 ◽  
Vol 28 (7) ◽  
pp. 403-405 ◽  
Author(s):  
T. P. Pearsall ◽  
R. E. Nahory ◽  
M. A. Pollack
Keyword(s):  
Impact Ionization ◽  
Ionization Rates

Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

2009 ◽  
Vol 615-617 ◽  
pp. 311-314 ◽  
Author(s):  
W.S. Loh ◽  
J.P.R. David ◽  
B.K. Ng ◽  
Stanislav I. Soloviev ◽  
Peter M. Sandvik ◽  
...  
Keyword(s):  
Phonon Scattering ◽  
Impact Ionization ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Different Temperatures ◽  
Ionization Coefficients ◽  
Increasing Temperature ◽  
The Impact ◽  
Good Agreement ◽  
Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

Measurement of the impact ionization rates in Al0.06Ga0.94Sb

1990 ◽  
Vol 57 (3) ◽  
pp. 249-251 ◽  
Author(s):  
H. Kuwatsuka ◽  
T. Mikawa ◽  
S. Miura ◽  
N. Yasuoka ◽  
Y. Kito ◽  
...  
Keyword(s):  
Impact Ionization ◽  
The Impact ◽  
Ionization Rates

Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

1997 ◽  
Vol 468 ◽  
Author(s):  
E. Bellotti ◽  
I. H. Oguzman ◽  
J. Kölnik ◽  
K. F. Brennan ◽  
R. Wang ◽  
...  
Keyword(s):  
Applied Field ◽  
Impact Ionization ◽  
Full Range ◽  
Wurtzite Phase ◽  
Valence Bands ◽  
Two Phases ◽  
Ionization Coefficients ◽  
Direct Numerical Integration ◽  
Applied Fields ◽  
Ionization Rates

ABSTRACTIn this paper, we present the first calculations of the electron and hole impact ionizatioi coefficients for both wurtzite and zincblende phase GaN as a function of the applied electrii field. The calculations are made using an ensemble Monte Carlo simulator including the ful details of the conduction and valence bands derived from an empirical pseudopotentia calculation. The interband impact ionization transition rates for both carrier species an determined by direct numerical integration including a wavevector dependent dielectric function It is found that the electron and hole ionization coefficients are comparable in zincblende Ga> at an applied field of ∼ 3 MV/cm, yet vary to a slight degree at both higher and lower applied field strengths. In the wurtzite phase, the electron and hole coefficients are comparable at hig] fields but diverge at lower applied fields. The most striking result is that the ionization rates an predicted to be substantially different for both carrier species between the two phases. It i predicted that the ionization rates for both carrier species in the zincblende phase are significanti; higher than in the wurtzite phase over the full range of applied fields examined.

Band Offset Dependance on Impact Ionization Rates in InAlGaAs Staircase Avalanche Photodiodes

1995 ◽  
Vol 34 (Part 2, No. 8B) ◽  
pp. L1048-L1050 ◽  
Author(s):  
Masayoshi Tsuji ◽  
Kikuo Makita ◽  
Isao Watanabe ◽  
Kenko Taguchi
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Band Offset ◽  
Ionization Rates

Impact ionization rates in an InGaAs/InAlAs superlattice

1989 ◽  
Vol 55 (10) ◽  
pp. 993-995 ◽  
Author(s):  
Toshiaki Kagawa ◽  
Yuichi Kawamura ◽  
Hiromitsu Asai ◽  
Mitsuru Naganuma ◽  
Osamu Mikami
Keyword(s):  
Impact Ionization ◽  
Ionization Rates

A formalism for the indirect Auger effect. I

1976 ◽  
Vol 347 (1651) ◽  
pp. 547-564 ◽  
Keyword(s):  
Room Temperature ◽  
Auger Recombination ◽  
Impact Ionization ◽  
Energy Gap ◽  
Electron Collision ◽  
Recombination Coefficient ◽  
Recombination Rates ◽  
Zinc Blende ◽  
Auger Effect ◽  
Ionization Rates

A general formalism has been developed for the calculation of band-band Auger recombination and impact ionization rates in diamond and zinc blende type structures. The energy gap involved in the transition must be of order 1eV or greater, at room temperature, for direct gaps but is arbi­trary for indirect gaps. A recombination coefficient of 28.1 x 10 -32 cm 6 s -1 for GaP (hole-hole-electron collision) has been obtained in reasonable agreement with experiment. The formalism gives better theoretical values for Ge and Si than so far available. This has tended to reduce the recombination rates expected theoretically.

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