Optical characterization of a native oxide anodically grown on gallium antimonide

1976 ◽  
Vol 28 (10) ◽  
pp. 631-632 ◽  
Author(s):  
D. E. Aspnes ◽  
B. Schwartz ◽  
A. A. Studna ◽  
L. Derick
Keyword(s):  
Gallium Antimonide ◽  
Optical Characterization ◽  
Native Oxide

Different theoretical approaches at optical characterization of randomly rough silicon surfaces covered with native oxide layers

2018 ◽  
Vol 50 (11) ◽  
pp. 1230-1233 ◽  
Author(s):  
Ivan Ohlídal ◽  
Jiří Vohánka ◽  
Jan Mistrík ◽  
Martin Čermák ◽  
Daniel Franta
Keyword(s):  
Optical Characterization ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Oxide Layers ◽  
Theoretical Approaches

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization

Optical Characterization of Monodispersed Aaqueous Cu2+-Doped CdS Nanoparticles Prepared Under Microwave Irradiation Conditions

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  
Keyword(s):  
Microwave Irradiation ◽  
Optical Characterization ◽  
Cds Nanoparticles

Application of Kubelka-Munk model on the optical characterization of translucent dental zirconia

2021 ◽  
Vol 258 ◽  
pp. 123994
Author(s):  
Luciana M. Schabbach ◽  
Bruno C. dos Santos ◽  
Letícia S. De Bortoli ◽  
Márcio Celso Fredel ◽  
Bruno Henriques
Keyword(s):  
Optical Characterization

scholarly journals Magneto-optical characterization of ZnO / Ni nano-laminate obtained via Atomic Layer Deposition

2021 ◽  
Vol 1762 (1) ◽  
pp. 012041
Author(s):  
K Buchkov ◽  
A Galluzzi ◽  
B Blagoev ◽  
A Paskaleva ◽  
P Terziyska ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Optical Characterization ◽  
Layer Deposition
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