Determination of energy band and surface‐state locations in GaAs using the separated‐medium surface‐acoustoelectric effect

1975 ◽  
Vol 27 (12) ◽  
pp. 641-643 ◽  
Author(s):  
H. Gilboa ◽  
M. E. Motamedi ◽  
P. Das
Keyword(s):  
Surface State ◽  
Energy Band ◽  
Acoustoelectric Effect

Determination of the Energy Band Gap Depending on the Oxidized Structures of Quantum Dots

2012 ◽  
Vol 116 (21) ◽  
pp. 11792-11796 ◽  
Author(s):  
Eunseog Cho ◽  
Hyosook Jang ◽  
Shinae Jun ◽  
Hyun A Kang ◽  
Jae Gwan Chung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

scholarly journals Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

2013 ◽  
Vol 417 ◽  
pp. 012012 ◽  
Author(s):  
A Ohta ◽  
H Murakami ◽  
S Higashi ◽  
S Miyazaki
Keyword(s):  
Energy Band ◽  
Band Alignment

scholarly journals Determination of the band structure diagram of semiconductor heterostructures applied in photovoltaics

2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Rafał Antoni Bogaczewicz ◽  
Ewa Popko ◽  
Katarzyna Renata Gwóźdź
Keyword(s):  
Band Structure ◽  
Electric Potential ◽  
Energy Band ◽  
Theoretical Calculations ◽  
Energy Band Diagram ◽  
Depletion Region ◽  
Semiconductor Heterostructures ◽  
Band Diagram ◽  
Approximation Model

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.

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