Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation

1975 ◽  
Vol 26 (8) ◽  
pp. 461-462 ◽  
Author(s):  
S. Yoshida ◽  
S. Misawa ◽  
A. Itoh
Keyword(s):  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Reactive Evaporation

scholarly journals Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)]

1995 ◽  
Vol 77 (11) ◽  
pp. 6073-6073 ◽  
Author(s):  
Y. Yano ◽  
K. Iijima ◽  
Y. Daitoh ◽  
T. Terashima ◽  
Y. Bando ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Pt Electrodes

Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

2000 ◽  
Vol 211 (1-4) ◽  
pp. 78-81 ◽  
Author(s):  
L.J Schowalter ◽  
J.C Rojo ◽  
G.A Slack ◽  
Y Shusterman ◽  
R Wang ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Epitaxial Growth

Epitaxial Growth of Beta ‐ SiC on TiC x by Reactive Evaporation

1993 ◽  
Vol 140 (6) ◽  
pp. 1756-1762 ◽  
Author(s):  
J. D. Parsons ◽  
R. F. Bunshah ◽  
O. M. Stafsudd
Keyword(s):  
Epitaxial Growth ◽  
Reactive Evaporation

Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

2000 ◽  
Vol 76 (8) ◽  
pp. 985-987 ◽  
Author(s):  
L. J. Schowalter ◽  
Y. Shusterman ◽  
R. Wang ◽  
I. Bhat ◽  
G. Arunmozhi ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Epitaxial Growth

Epitaxial growth and dielectric properties of BaTiO3films on Pt electrodes by reactive evaporation

1994 ◽  
Vol 76 (12) ◽  
pp. 7833-7838 ◽  
Author(s):  
Y. Yano ◽  
K. Iijima ◽  
Y. Daitoh ◽  
T. Terashima ◽  
Y. Bando ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Pt Electrodes

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

scholarly journals Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1063
Author(s):  
Badis Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Fiber Texture ◽  
Dc Magnetron Sputtering ◽  
Sem Images ◽  
Aln Film ◽  
Aln Buffer

This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation

2000 ◽  
Vol 87 (6) ◽  
pp. 2830-2834 ◽  
Author(s):  
Haoxiang Zhang ◽  
Zhizhen Ye ◽  
Binghui Zhao
Keyword(s):  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Gan On Si
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