Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation

2000 ◽  
Vol 87 (6) ◽  
pp. 2830-2834 ◽  
Author(s):  
Haoxiang Zhang ◽  
Zhizhen Ye ◽  
Binghui Zhao
Keyword(s):  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Gan On Si

scholarly journals Erratum: Epitaxial growth and dielectric properties of BaTiO3 films on Pt electrodes by reactive evaporation [J. Appl. Phys. 76, 7833 (1994)]

1995 ◽  
Vol 77 (11) ◽  
pp. 6073-6073 ◽  
Author(s):  
Y. Yano ◽  
K. Iijima ◽  
Y. Daitoh ◽  
T. Terashima ◽  
Y. Bando ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Pt Electrodes

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Epitaxial Growth of Beta ‐ SiC on TiC x by Reactive Evaporation

1993 ◽  
Vol 140 (6) ◽  
pp. 1756-1762 ◽  
Author(s):  
J. D. Parsons ◽  
R. F. Bunshah ◽  
O. M. Stafsudd
Keyword(s):  
Epitaxial Growth ◽  
Reactive Evaporation

Epitaxial growth and dielectric properties of BaTiO3films on Pt electrodes by reactive evaporation

1994 ◽  
Vol 76 (12) ◽  
pp. 7833-7838 ◽  
Author(s):  
Y. Yano ◽  
K. Iijima ◽  
Y. Daitoh ◽  
T. Terashima ◽  
Y. Bando ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Reactive Evaporation ◽  
Pt Electrodes

Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy

1999 ◽  
Vol 201-202 ◽  
pp. 359-364 ◽  
Author(s):  
H.P.D. Schenk ◽  
G.D. Kipshidze ◽  
V.B. Lebedev ◽  
S. Shokhovets ◽  
R. Goldhahn ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Gan On Si

Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation

1975 ◽  
Vol 26 (8) ◽  
pp. 461-462 ◽  
Author(s):  
S. Yoshida ◽  
S. Misawa ◽  
A. Itoh
Keyword(s):  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Reactive Evaporation

Epitaxial growth of NiO/Pd superlattices by reactive evaporation method

2000 ◽  
Vol 374 (1) ◽  
pp. 21-26 ◽  
Author(s):  
T Manago ◽  
T Ono ◽  
H Miyajima ◽  
I Yamaguchi ◽  
K Kawaguchi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Evaporation Method ◽  
Reactive Evaporation

ChemInform Abstract: Epitaxial Growth of β-SiC on TiCx by Reactive Evaporation.

ChemInform ◽  
2010 ◽  
Vol 24 (42) ◽  
pp. no-no
Author(s):  
J. D. PARSONS ◽  
R. F. BUNSHAH ◽  
O. M. STAFSUDD
Keyword(s):  
Epitaxial Growth ◽  
Reactive Evaporation
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