Plasma channel formation by short pulse laser

1996 ◽  
Vol 3 (4) ◽  
pp. 1356-1359 ◽  
Author(s):  
R. Annou ◽  
V. K. Tripathi ◽  
M. P. Srivastava
1997 ◽  
Vol 78 (21) ◽  
pp. 4047-4050 ◽  
Author(s):  
K. Krushelnick ◽  
A. Ting ◽  
C. I. Moore ◽  
H. R. Burris ◽  
E. Esarey ◽  
...  

2011 ◽  
Vol 29 (2) ◽  
pp. 219-225 ◽  
Author(s):  
Updesh Verma ◽  
A.K. Sharma

AbstractA model for plasma channel formation by a laser pre-pulse in a low Z gas (Hydrogen) embedded with high Z atoms (Ar) is developed. The laser of intensity I ≅ 1014 W/cm2 ionizes hydrogen atoms fully whereas Ar atoms are ionized only singly. After the first pulse is gone, plasma expands on the time scale of a nanosecond to produce a hydrogen plasma channel with minimum density on the axis. A second intense short pulse laser of intensity I ≥ 1016 W/cm2 gets focused. It tunnel ionizes the remaining Ar. The Ar acquires Ar8+ charge state after loosing 8 ions and acquires Ne like configuration and could emit X-rays.


2011 ◽  
Vol 375 (45) ◽  
pp. 4022-4028 ◽  
Author(s):  
Shan Zhang ◽  
Xue-Ren Hong ◽  
Hong-Yu Wang ◽  
Bai-Song Xie

2005 ◽  
Vol 12 (4) ◽  
pp. 043106 ◽  
Author(s):  
V. K. Tripathi ◽  
T. Taguchi ◽  
C. S. Liu

2005 ◽  
Vol 54 (7) ◽  
pp. 3247
Author(s):  
Dong Quan-Li ◽  
Yan Fei ◽  
Zhang Jie ◽  
Jin Zhan ◽  
Yang Hui ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


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