Plasma channel charging by an intense short pulse laser and ion Coulomb explosion

2005 ◽  
Vol 12 (4) ◽  
pp. 043106 ◽  
Author(s):  
V. K. Tripathi ◽  
T. Taguchi ◽  
C. S. Liu
1996 ◽  
Vol 3 (4) ◽  
pp. 1356-1359 ◽  
Author(s):  
R. Annou ◽  
V. K. Tripathi ◽  
M. P. Srivastava

2011 ◽  
Vol 375 (45) ◽  
pp. 4022-4028 ◽  
Author(s):  
Shan Zhang ◽  
Xue-Ren Hong ◽  
Hong-Yu Wang ◽  
Bai-Song Xie

1997 ◽  
Vol 78 (21) ◽  
pp. 4047-4050 ◽  
Author(s):  
K. Krushelnick ◽  
A. Ting ◽  
C. I. Moore ◽  
H. R. Burris ◽  
E. Esarey ◽  
...  

2005 ◽  
Vol 54 (7) ◽  
pp. 3247
Author(s):  
Dong Quan-Li ◽  
Yan Fei ◽  
Zhang Jie ◽  
Jin Zhan ◽  
Yang Hui ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

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