Influence of molecular processes on the hydrogen atomic system in an expanding argon–hydrogen plasma

1995 ◽  
Vol 2 (3) ◽  
pp. 1002-1008 ◽  
Author(s):  
R. F. G. Meulenbroeks ◽  
R. A. H. Engeln ◽  
C. Box ◽  
I. de Bari ◽  
M. C. M. van de Sanden ◽  
...  
Keyword(s):  
Atomic System ◽  
Hydrogen Plasma ◽  
Molecular Processes

scholarly journals THE ATOMIC-MOLECULAR PROCESSES IN A HYDROGEN PLASMA AT INITIAL STAGE OF A DISCHARGE

2019 ◽  
pp. 105-109
Author(s):  
V.B. Yuferov ◽  
E.I. Skibenko ◽  
V.I. Tkachov ◽  
V.V. Katrechko ◽  
A.S. Svichkar
Keyword(s):  
Energy Balance ◽  
Hydrogen Plasma ◽  
Molecular Ions ◽  
Plasma Formation ◽  
Molecular Processes ◽  
Initial Stage ◽  
A Charge

For 0-dimensional the task of a hydrogen plasma formation at initial stage of a charge is considered. For these conditions the dynamics of atomic and molecular ions density and energy balance in a hydrogen plasma are considered.

Degradation of YBa2Cu3O7 by Hydrogen Plasma

1991 ◽  
Vol 111 (7) ◽  
pp. 684-685
Author(s):  
Takao Kutsukake ◽  
Yoshimichi Ohki
Keyword(s):  
Hydrogen Plasma

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

Lighting a path: genetic studies pinpoint neurodevelopmental mechanisms in autism and related disorders

2012 ◽  
Vol 14 (3) ◽  
pp. 239-252
Keyword(s):  
Molecular Mechanisms ◽  
Protein Localization ◽  
Regulation Of Gene Expression ◽  
Neuronal Cell ◽  
Mrna Splicing ◽  
Genetic Mutations ◽  
Scaffolding Proteins ◽  
Molecular Processes ◽  
Genetic Studies ◽  
Novel Treatments

In this review, we outline critical molecular processes that have been implicated by discovery of genetic mutations in autism. These mechanisms need to be mapped onto the neurodevelopment step(s) gone awry that may be associated with cause in autism. Molecular mechanisms include: (i) regulation of gene expression; (ii) pre-mRNA splicing; (iii) protein localization, translation, and turnover; (iv) synaptic transmission; (v) cell signaling; (vi) the functions of cytoskeletal and scaffolding proteins; and (vii) the function of neuronal cell adhesion molecules. While the molecular mechanisms appear broad, they may converge on only one of a few steps during neurodevelopment that perturbs the structure, function, and/or plasticity of neuronal circuitry. While there are many genetic mutations involved, novel treatments may need to target only one of few developmental mechanisms.

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