Stress relaxation and creep in free-standing thin Al films studied using a bulge tester

1999 ◽  
Author(s):  
A. J. Kalkman ◽  
A. H. Verbruggen ◽  
G. C. A. M. Janssen
Keyword(s):  
Stress Relaxation ◽  
Free Standing

Activation Energy Measurement in Thin Gold Film by MEMS-Based Tensile Testing Device

Materials ◽  
2004 ◽  
Author(s):  
Jong H. Han ◽  
Taher M. Saif
Keyword(s):  
Activation Energy ◽  
Relaxation Time ◽  
Stress Relaxation ◽  
Analytical Model ◽  
Tensile Testing ◽  
Relaxation Times ◽  
Tensile Specimen ◽  
Testing Device ◽  
Free Standing ◽  
Tensile Tester

In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.

scholarly journals Shear-stress relaxation in free-standing polymer films

2018 ◽  
Vol 98 (6) ◽  
Author(s):  
G. George ◽  
I. Kriuchevskyi ◽  
H. Meyer ◽  
J. Baschnagel ◽  
J. P. Wittmer
Keyword(s):  
Shear Stress ◽  
Stress Relaxation ◽  
Polymer Films ◽  
Free Standing ◽  
Shear Stress Relaxation

Stress relaxation in free-standing aluminum beams

2005 ◽  
Vol 476 (1) ◽  
pp. 118-124 ◽  
Author(s):  
Hoo-Jeong Lee ◽  
Ping Zhang ◽  
John C. Bravman
Keyword(s):  
Stress Relaxation ◽  
Free Standing

Monotonic Testing and Tension-Tension Fatigue Testing of Free-standing Al Microtensile Beams

2003 ◽  
Vol 795 ◽  
Author(s):  
Nicholas Barbosa ◽  
Paul El-Deiry ◽  
Richard P. Vinci
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Strain Rate ◽  
Stress Level ◽  
Fatigue Testing ◽  
Monotonic Loading ◽  
Free Standing ◽  
Relaxation Dependence ◽  
Relaxation Experiments ◽  
Cycles To Failure

ABSTRACTFree-standing Al thin films were loaded statically and dynamically through the use of a custom-built microtensile system. The system is capable of performing monotonic loading/unloading up to 50 μm/s (10-1/s) and tension-tension fatigue experiments at 100 Hz on 600 μm long, 100 μm wide, and 1 μm thick free-standing Al microtensile beams. Monotonic loading/unloading and stress relaxation experiments have been performed. The microtensile beams show plasticity as well as a relaxation dependence on strain rate and stress level. Displacement controlled tension-tension fatigue experiments have also been performed. A trend of decreasing cycles to failure with increasing displacement amplitude and increasing mean displacement has been noted but requires further experimental exploration.

Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling

2013 ◽  
Vol 740-742 ◽  
pp. 673-676
Author(s):  
Nicolò Piluso ◽  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Andrea Canino ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Finite Element ◽  
Stress Relaxation ◽  
Finite Element Modeling ◽  
Stress Tensor ◽  
Raman Mode ◽  
Mode Analysis ◽  
Free Standing ◽  
Element Modeling ◽  
Standing Structure ◽  
Si Films

In this paper, micro-Raman characterizations and Finite element modeling (FEM) of microstructures (cantilever, bridge, planar rotating probe) realized on single-crystal (100) 3C-SiC/Si films are performed. Transverse optical (TO) Raman mode analysis reveals the stress relaxation on the free standing structure (796.5 cm-1) respect to the stressed unreleased region (795.7 cm-1). The TO Raman mode exhibits an intense shift, up to 2 cm-1, located on the undercut region, where the Silicon substrate starts to be released. Such effect is ascribed to the modification of the Raman stress tensor that makes the generalized axial regime, described by diagonal components of the Raman stress tensor, unsuitable to describe the stress status on this region. Raman maps analysis and FEM simulations show the “activation” of the shear stress, i.e. non-diagonal components of the stress tensor. The aim of future works will be to minimize the stress field generation and the defects density within the epitaxial layer.

Stress relaxation of free-standing aluminum beams for microelectromechanical systems applications

2000 ◽  
Vol 76 (23) ◽  
pp. 3415-3417 ◽  
Author(s):  
Hoo-Jeong Lee ◽  
Guido Cornella ◽  
John C. Bravman
Keyword(s):  
Stress Relaxation ◽  
Microelectromechanical Systems ◽  
Free Standing

Photo-induced bending in a light-activated polymer laminated composite

Soft Matter ◽  
2015 ◽  
Vol 11 (13) ◽  
pp. 2673-2682 ◽  
Author(s):  
Xiaoming Mu ◽  
Nancy Sowan ◽  
Julia A. Tumbic ◽  
Christopher N. Bowman ◽  
Patrick T. Mather ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Intermediate Layer ◽  
Laminated Composite ◽  
Polymeric Composite ◽  
Free Standing

Photo-induced bending was achieved for a free-standing tri-layer polymeric composite by laminating a pre-stressed intermediate layer with light activated polymers and photo-triggered stress relaxation on one of the two side layers, allowing significant bending.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

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