Amorphous silicon thin film X-ray sensor

1999 ◽  
Author(s):  
Wei Guang-Pu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
X Ray

Effects of X-ray radiation on hydrogenated amorphous silicon thin-film transistors and characteristics of tungsten shield layer

2010 ◽  
Vol 10 (1) ◽  
pp. 184-186
Author(s):  
Hee-suk Pang ◽  
Yun-sik Jeong ◽  
Hong-Seok Choi ◽  
Chang-Wook Han ◽  
Yoon-Heung Tak ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
X Ray ◽  
Hydrogenated Amorphous

Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
M J Powell ◽  
C Glasse ◽  
I D French ◽  
A R Franklin ◽  
J R Hughes ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Image Sensor ◽  
Sensor Technology ◽  
Noise Performance ◽  
Silicon Thin Film ◽  
Silicon Photodiode ◽  
Insulating Layer ◽  
X Ray

ABSTRACTWe have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.

Fluoroscopic x-ray imaging with amorphous silicon thin-film arrays

1994 ◽  
Author(s):  
Ulrich W. Schiebel ◽  
Norbert Conrads ◽  
Norbert Jung ◽  
Martin Weibrecht ◽  
Herfried K. Wieczorek ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
X Ray ◽  
X Ray Imaging

Dynamic x-ray imaging system based on an amorphous silicon thin-film array

1998 ◽  
Author(s):  
Norbert Jung ◽  
P. L. Alving ◽  
Falko Busse ◽  
Norbert Conrads ◽  
Henk J. Meulenbrugge ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Imaging System ◽  
Silicon Thin Film ◽  
X Ray ◽  
X Ray Imaging

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Amorphous-silicon thin film transistor with two-step exposure process

2000 ◽  
Author(s):  
Pi-Fu Chen ◽  
Jr-Hong Chen ◽  
Dou-I Chen ◽  
HsixgJu Sung ◽  
June-Wei Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Exposure Process

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

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