The prospects for low energy implantation with large molecular ions—the case of decaborane

1999 ◽  
Author(s):  
Marek Sosnowski
Keyword(s):  
Molecular Ions ◽  
Low Energy

Fragmentations des cétones aliphatiques métastables. II. Compétition entre éliminations de radicaux hydrocarbonés et d'alcanes.

1982 ◽  
Vol 60 (16) ◽  
pp. 2107-2112 ◽  
Author(s):  
Guy Bouchoux ◽  
Yannik Hoppilliard
Keyword(s):  
Molecular Ions ◽  
Low Energy ◽  
Final States ◽  
Energy Channel ◽  
Aliphatic Ketones ◽  
Thermochemical Stability

The fragmentation of the metas table molecular ions of six aliphatic ketones is studied. The ion fragment abundances [M – R•] and [M–RH] (R• being a lateral radical) can be predicted from the thermochemical stability of the corresponding final states. Exceptions to this behavior are found for metastable molecular ions of methylethylketone and methylisopropylketone where it is demonstrated that the lifetime of these ions is too short to permit significant decompositions via the low energy channel after 10−5 s.

scholarly journals Low-energy collisions with atomic and molecular ions in a photocathode electron target

2009 ◽  
Vol 194 (1) ◽  
pp. 012024 ◽  
Author(s):  
A Wolf ◽  
D A Orlov ◽  
C Krantz ◽  
M Lestinsky ◽  
A Shornikov ◽  
...  
Keyword(s):  
Molecular Ions ◽  
Low Energy ◽  
Electron Target

Low Energy Implantation of Boron with Decaborane Ions

2000 ◽  
Vol 610 ◽  
Author(s):  
Maria A. Albano ◽  
Vijay Babaram ◽  
John M. Poate ◽  
Marek Sosnowski ◽  
Dale C. Jacobson
Keyword(s):  
Ion Beam ◽  
Molecular Ions ◽  
Ion Beams ◽  
Ion Source ◽  
Low Energy ◽  
Beam Deflection ◽  
Nuclear Reaction Analysis ◽  
Low Energies ◽  
Beam Currents ◽  
P Type

AbstractFormation of p-type shallow junctions for future generations of Si devices will require ion implantation of B at very low energies (< 1 keV). An alternative to implantation of monomer ions at very low energy is implantation of large molecular ions at a higher energy. In an ion beam of decaborane (B10H14) each of the B atoms carries only 9% of the ion kinetic energy. We have examined ionization properties of decaborane and built an experimental ion source and an implantation apparatus with magnetic mass analysis. Analyzed decaborane ion beams with energies from 2 to 10 keV and beam currents of several microamperes were obtained. Si samples were implanted with decaborane ions and the implanted dose measured by current integration was compared with B content obtained by nuclear reaction analysis. Experiments with electrostatic beam deflection show that the large ions survive the transport in the implanter environment and that neutralization is negligible. During implantation, the retained B dose is reduced in comparison with the nominal implanted dose due to sputtering. Dose loss is greater at 200 eV compared to 500 eV. The properties of decaborane ion beams and the prospects of using them for shallow implantation of B into Si are discussed.

Dissociation Thresholds of Low-Energy Molecular Ions on a Cu(111) Surface

1998 ◽  
Vol 37 (Part 1, No. 9A) ◽  
pp. 5008-5010 ◽  
Author(s):  
Hiroyuki Yamamoto ◽  
Yuji Baba ◽  
Teikichi A. Sasaki
Keyword(s):  
Molecular Ions ◽  
Low Energy
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