Electrical stress on insulators of the vivitron

1999 ◽  
Author(s):  
F. Osswald ◽  
J. Heugel ◽  
E. Jegham ◽  
N. Lahera ◽  
R. Rebmeister ◽  
...  
Keyword(s):  
Electrical Stress

Colorimetric Characterizations of Large Area White OLEDs Under Thermal And Electrical Stress Using TM-30-18 Method

2020 ◽  
Author(s):  
Oussama Ben Abdellah ◽  
Andrea Al Haddad ◽  
Mustapha El Halaoui ◽  
Pascal Dupuis ◽  
Laurent Canale ◽  
...  
Keyword(s):  
Large Area ◽  
Electrical Stress ◽  
White Oleds

scholarly journals Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

2021 ◽  
Vol 11 (11) ◽  
pp. 4838
Author(s):  
Je-Hyuk Kim ◽  
Youngjin Seo ◽  
Jun Tae Jang ◽  
Shinyoung Park ◽  
Dongyeon Kang ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
Circuit Simulation ◽  
Flexible Substrate ◽  
Atomic Layer ◽  
Operating Conditions ◽  
Gate Insulator ◽  
Compact Modeling ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Stress ◽  
Bending Radius

Accurate circuit simulation reflecting physical and electrical stress is of importance in indium gallium zinc oxide (IGZO)-based flexible electronics. In particular, appropriate modeling of threshold voltage (VT) changes in different bias and bending conditions is required for reliability-aware simulation in both device and circuit levels. Here, we present SPICE compatible compact modeling of IGZO transistors and inverters having an atomic layer deposition (ALD) Al2O3 gate insulator on a polyethylene terephthalate (PET) substrate. Specifically, the modeling was performed to predict the behavior of the circuit using stretched exponential function (SEF) in a bending radius of 10 mm and operating voltages ranging between 4 and 8 V. The simulation results of the IGZO circuits matched well with the measured values in various operating conditions. It is expected that the proposed method can be applied to process improvement or circuit design by predicting the direct current (DC) and alternating current (AC) responses of flexible IGZO circuits.

scholarly journals Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: Effects of field and temperature

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Stress Effects ◽  
Electrical Stress ◽  
Heterojunction Field Effect Transistors

scholarly journals Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress

2011 ◽  
Vol 99 (10) ◽  
pp. 103510 ◽  
Author(s):  
V. Iglesias ◽  
M. Lanza ◽  
K. Zhang ◽  
A. Bayerl ◽  
M. Porti ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Electrical Stress
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