Probing thermal conductivity variations in excimer laser irradiated polyimide foils

1999 ◽  
Author(s):  
H. G. Walther ◽  
T. Kitzing ◽  
Z. Bozoki ◽  
G. L. Liakhou ◽  
S. Paoloni
Keyword(s):  
Thermal Conductivity ◽  
Excimer Laser

Probing thermal conductivity variations in excimer laser irradiated polyimide foils

1999 ◽  
Vol 85 (11) ◽  
pp. 7540-7543 ◽  
Author(s):  
H. G. Walther ◽  
T. Kitzing ◽  
Z. Bozoki ◽  
G. L. Liakhou ◽  
S. Paoloni
Keyword(s):  
Thermal Conductivity ◽  
Excimer Laser

Effect of Hydrogen and Thermal Conductivity on Nucleation of Polycrystalline Si by Excimer Laser Annealing

2004 ◽  
Vol 43 (1) ◽  
pp. 293-298 ◽  
Author(s):  
Naoya Kawamoto ◽  
Naoto Matsuo ◽  
Hisashi Abe ◽  
Fakhrul Anwar ◽  
Isao Hasegawa ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Excimer Laser Recrystallization of a-Si Employing Aluminum Masking Window

2000 ◽  
Vol 609 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Recrystallization ◽  
Polycrystalline Silicon Films ◽  
And Control ◽  
Xecl Excimer Laser ◽  
High Reflectance ◽  
Lateral Heat

ABSTRACTA new excimer laser recrystallization method of amorphous silicon is proposed to increase the grain size and control the grain boundary locations in polycrystalline silicon films. The proposed method is based on the lateral grain growth which occurs at the interface between molten and unmolten regions. To obtain selectively molten regions, the proposed method employs aluminum patterns on amorphous silicon. The aluminum patterns act as the beam shield during the laser irradiation as well as the lateral heat sink during the solidification period. The high reflectance of aluminum at the wavelength of XeCl excimer laser offers stable beam shielding property, and the high thermal conductivity enhances the lateral heat flow by the quick draining of laterally propagated heat. TEM observation has revealed that the well arranged large grains were successfully obtained.

Advanced Excimer-Laser Recrystallization Technology for Crystal-Si Thin-Film Devices

2001 ◽  
Vol 685 ◽  
Author(s):  
Masakiyo Matsumura
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Heat Flow ◽  
Specific Heat ◽  
Excimer Laser ◽  
Phase Shifter ◽  
Laser Light ◽  
Single Shot ◽  
Capping Layer ◽  
Flow Flux

AbstractThis paper reviews an excimer-laser annealing (ELA) method of Si thin-films on glass studied in the Tokyo Institute of Technology, aiming at position-controlled ultra-large grain growth with high packing density by a single shot irradiation of a laser-light pulse. Key concepts are (I) 2-D modulation of the laser light intensity on the sample surface, (II) reduction of the heat removal rate from the molten Si thin layer of high temperature, and (III) enlargement of the effective specific-heat while keeping the effective thermal-conductivity low for annealed layers. There were two possible solutions for the condition (I). The first solution is of an application of a cross-coupled phase-shifter formed on a transparent quartz plate. The second solution is of a half-tone phase-modulation method (PAMELA method) using semi-transparent thin films on quartz substrate with phase-shifter. The condition (II) is satisfied by changing the SiO2 underlayer to the porous or organic silica underlayer for reducing vertical heat flow flux to the cool underlayer, and by thinning the Si layer for reducing heat flow flux along the highly conductive Si layer. The condition (III) is satisfied, by the SiON capping layer for a KrF excimer laser, and by the SiOC capping layer for a XeCl excimer laser, since they have a reasonable light absorption coefficient, low thermal conductivity, large specific-heat and sufficient heat tolerance.

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