Carbon onions produced by ion-implantation

1998 ◽  
Author(s):  
T. Cabioc’h ◽  
M. Jaouen ◽  
M. F. Denanot ◽  
J. P. Rivière ◽  
J. Delafond ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Carbon Onions

Fourier transform infra-red characterization of carbon onions produced by carbon-ion implantation

1998 ◽  
Vol 285 (3-4) ◽  
pp. 216-220 ◽  
Author(s):  
T. Cabioc'h ◽  
A. Kharbach ◽  
A. Le Roy ◽  
J.P. Rivière
Keyword(s):  
Fourier Transform ◽  
Ion Implantation ◽  
Carbon Ion ◽  
Infra Red ◽  
Carbon Onions

Carbon onions formation by high-dose carbon ion implantation into copper and silver

2000 ◽  
Vol 128-129 ◽  
pp. 43-50 ◽  
Author(s):  
T Cabioc’h ◽  
M Jaouen ◽  
E Thune ◽  
P Guérin ◽  
C Fayoux ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Dose ◽  
Carbon Ion ◽  
Carbon Onions

scholarly journals Formation of large area closely packed carbon onions film by plasma-based ion implantation

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Naohiro Matsumoto ◽  
Hiroshi Kinoshita ◽  
Junho Choi ◽  
Takahisa Kato
Keyword(s):  
Ion Implantation ◽  
Large Area ◽  
Carbon Onions

Electron microscopy study of carbon onions synthesized by ion implantation

2002 ◽  
Vol 82 (8) ◽  
pp. 1509-1520 ◽  
Author(s):  
Thierry Cabioc'h ◽  
Elsa Thune ◽  
Michel Jaouen ◽  
Florian Banhart
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Carbon Onions

Influence of the implantation parameters on the microstructure of carbon onions produced by carbon ion implantation

1998 ◽  
Vol 73 (21) ◽  
pp. 3096-3098 ◽  
Author(s):  
T. Cabioc’h ◽  
M. Jaouen ◽  
M. F. Denanot ◽  
P. Bechet
Keyword(s):  
Ion Implantation ◽  
Carbon Ion ◽  
Carbon Onions

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

Interlayer mixing in GaAs/AlxGa1-xAs heterostructures as a result of Se+ ion implantation

1988 ◽  
Vol 46 ◽  
pp. 908-909
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs
Keyword(s):  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Dark Field ◽  
Atomic Mass ◽  
Composition Profile ◽  
Semiconductor Heterostructures ◽  
Transmission Electron ◽  
Microscope Images ◽  
Damage Process ◽  
Electron Energy Loss

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.

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