Archival searches for optical emission from GRB910122 and GRB970228

1998 ◽  
Author(s):  
J. Gorosabel ◽  
A. J. Castro-Tirado
Keyword(s):  
Optical Emission

Characterization of ultraintense laser produced fast electron propagation in insulatorsvs.conductors by optical emission diagnostics

2006 ◽  
Vol 133 ◽  
pp. 499-502 ◽  
Author(s):  
M. Manclossi ◽  
J. J. Santos ◽  
J. Faure ◽  
A. Guenmie-Tafo ◽  
D. Batani ◽  
...  
Keyword(s):  
Fast Electron ◽  
Optical Emission ◽  
Electron Propagation

Impact of Surface Morphology and Polarity on ZnO Optical Emission

2008 ◽  
Author(s):  
Leonard Brillson ◽  
Daniel Doutt ◽  
Yufeng Dong ◽  
Michelle Myers ◽  
Dina Tayim ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Optical Emission

Optical emission sensing for laser-based additive manufacturing—What are we actually measuring?

2021 ◽  
Vol 33 (1) ◽  
pp. 012010
Author(s):  
Christopher B. Stutzman ◽  
Wesley F. Mitchell ◽  
Abdalla R. Nassar
Keyword(s):  
Additive Manufacturing ◽  
Optical Emission

THE TELLURIUM OPTICAL EMISSION EXCITED BY ELECTRON IMPACT

2013 ◽  
Vol 33 (0) ◽  
pp. 106-109
Author(s):  
М. М. Ердевді ◽  
В. В. Звенигородський ◽  
П. П. Маркуш ◽  
О. Б. Шпеник
Keyword(s):  
Electron Impact ◽  
Optical Emission

Preparation of TiN Films by Magnetron Sputtering and Diagnostics for Optical Emission of Magnetron Plasma.

Shinku ◽  
1995 ◽  
Vol 38 (3) ◽  
pp. 339-342 ◽  
Author(s):  
Yasuki AIHARA ◽  
Yuko HIROHATA ◽  
Tomoaki HINO ◽  
Toshiro YAMASHINA
Keyword(s):  
Magnetron Sputtering ◽  
Optical Emission ◽  
Tin Films

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

Failure Analysis and Defect Inspection of Electronic Devices by High-Resolution Cathodoluminescence

2017 ◽  
Author(s):  
C. Monachon ◽  
M.S. Zielinski ◽  
D. Gachet ◽  
S. Sonderegger ◽  
S. Muckenhirn ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Electronic Materials ◽  
Electronic Devices ◽  
Optical Emission ◽  
Large Field ◽  
Nanometer Scale ◽  
Defect Analysis ◽  
Defect Inspection ◽  
Spectrally Resolved ◽  
Non Destructive

Abstract Quantitative cathodoluminescence (CL) microscopy is a new optical spectroscopy technique that measures electron beam-induced optical emission over large field of view with a spatial resolution close to that of a scanning electron microscope (SEM). Correlation of surface morphology (SE contrast) with spectrally resolved and highly material composition sensitive CL emission opens a new pathway in non-destructive failure and defect analysis at the nanometer scale. Here we present application of a modern CL microscope in defect and homogeneity metrology, as well as failure analysis in semiconducting electronic materials

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