The accurate measurement of spin orbit torque by utilizing the harmonic longitudinal voltage with Wheatstone bridge structure

2020 ◽  
Vol 116 (22) ◽  
pp. 222402 ◽  
Author(s):  
Bo Wang ◽  
Yonghai Guo ◽  
Bo Han ◽  
Ze Yan ◽  
Tao Wang ◽  
...  
Keyword(s):  
Wheatstone Bridge ◽  
Spin Orbit ◽  
Bridge Structure

scholarly journals Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge

2019 ◽  
Author(s):  
Hongchuan Jiang ◽  
Xiaoyu Tian ◽  
Xinwu Deng ◽  
Xiaohui Zhao ◽  
Luying Zhang ◽  
...  
Keyword(s):  
Output Voltage ◽  
Wheatstone Bridge ◽  
Hydrogen Sensor ◽  
Micro Electro Mechanical System ◽  
Alloy Film ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Bridge Structure ◽  
Hydrogen Sensors ◽  
Output Resistance

MEMThe PdNi film hydrogen sensors with Wheatstone bridge structure were designed and fabricated by the micro-electro-mechanical system (MEMS) technology. The integrated sensors consisted of four PdNi alloy film resistors. The interval two of them were shielded with silicon nitride film and used as reference resistance, while the others were used for hydrogen sensing. The PdNi alloy films and SiN films were deposited by magnetron sputtering. The morphology and microstructure of the PdNi films were characterized with X-ray diffraction (XRD). The output resistance signal was converted to millivolt output voltage signal for easy data acquisition. Hydrogen (H2) sensing properties of PdNi film hydrogen sensor with Wheatstone bridge structure was investigated under different temperatures (30℃, 50℃ and 70℃) and H2 concentrations (from 10 ppm to 0.4%). The hydrogen sensor demonstrated good response at different hydrogen concentrations and high repeatability in cycle testing under 0.4% H2 concentration. Under 10ppm hydrogen, the PdNi film hydrogen sensor had evident and collectable output voltage of 600 μV.

scholarly journals AlGaN/GaN pressure sensor with a Wheatstone bridge structure

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085202 ◽  
Author(s):  
X. Tan ◽  
Y. J. Lv ◽  
X. Y. Zhou ◽  
Y. G. Wang ◽  
X. B. Song ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Bridge Structure

scholarly journals Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge

Sensors ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 1096 ◽  
Author(s):  
Hongchuan Jiang ◽  
Xiaoyu Tian ◽  
Xinwu Deng ◽  
Xiaohui Zhao ◽  
Luying Zhang ◽  
...  
Keyword(s):  
Wheatstone Bridge ◽  
Hydrogen Sensor ◽  
Micro Electro Mechanical System ◽  
Alloy Film ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Bridge Structure ◽  
Hydrogen Sensors ◽  
Mems Technology ◽  
C 50

The PdNi film hydrogen sensors with Wheatstone bridge structure were designed and fabricated with the micro-electro-mechanical system (MEMS) technology. The integrated sensors consisted of four PdNi alloy film resistors. The internal two were shielded with silicon nitride film and used as reference resistors, while the others were used for hydrogen sensing. The PdNi alloy films and SiN films were deposited by magnetron sputtering. The morphology and microstructure of the PdNi films were characterized with X-ray diffraction (XRD). For efficient data acquisition, the output signal was converted from resistance to voltage. Hydrogen (H2) sensing properties of PdNi film hydrogen sensors with Wheatstone bridge structure were investigated under different temperatures (30 °C, 50 °C and 70 °C) and H2 concentrations (from 10 ppm to 0.4%). The hydrogen sensor demonstrated distinct response at different hydrogen concentrations and high repeatability in cycle testing under 0.4% H2 concentration. Towards 10 ppm hydrogen, the PdNi film hydrogen sensor had evident and collectable output voltage of 600 μV.

Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology

2011 ◽  
Vol 483 ◽  
pp. 200-205
Author(s):  
Xiao Feng Zhao ◽  
Dian Zhong Wen ◽  
Yang Li ◽  
Yuan Xin Hou ◽  
Chun Peng Ai ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Sensor ◽  
Single Crystal Silicon ◽  
Wheatstone Bridge ◽  
Structure Design ◽  
Constant Current ◽  
Bridge Structure ◽  
Crystal Silicon ◽  
Mems Technology ◽  
Single Crystal Silicon Substrate

A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.

Transient gain-versus-absorption laser probing of spin-orbit states, kinetics and dynamics

1987 ◽  
Vol 84 ◽  
pp. 385-391
Author(s):  
Smedley John E. ◽  
Hess Wayne P. ◽  
Haugen Harold K. ◽  
R. Leone Stephen
Keyword(s):  
Spin Orbit ◽  
Laser Probing ◽  
Kinetics And Dynamics
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