scholarly journals AlGaN/GaN pressure sensor with a Wheatstone bridge structure

AIP Advances ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 085202 ◽  
Author(s):  
X. Tan ◽  
Y. J. Lv ◽  
X. Y. Zhou ◽  
Y. G. Wang ◽  
X. B. Song ◽  
...  
Keyword(s):  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Bridge Structure

Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology

2011 ◽  
Vol 483 ◽  
pp. 200-205
Author(s):  
Xiao Feng Zhao ◽  
Dian Zhong Wen ◽  
Yang Li ◽  
Yuan Xin Hou ◽  
Chun Peng Ai ◽  
...  
Keyword(s):  
Thin Films ◽  
Pressure Sensor ◽  
Single Crystal Silicon ◽  
Wheatstone Bridge ◽  
Structure Design ◽  
Constant Current ◽  
Bridge Structure ◽  
Crystal Silicon ◽  
Mems Technology ◽  
Single Crystal Silicon Substrate

A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.

On the Modeling of the Wheatstone-Bridge Piezoresistive Pressure Sensor: A Finite-Element-Based Approach

1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert
Keyword(s):  
Finite Element ◽  
Concentration Profile ◽  
Pressure Sensor ◽  
Dopant Concentration ◽  
Wheatstone Bridge ◽  
Design Parameters ◽  
Angular Orientation ◽  
Junction Depth ◽  
Piezoresistive Pressure Sensor ◽  
Limited Diffusion

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.

The Electricity Design of Pressure Sensor

2013 ◽  
Vol 438-439 ◽  
pp. 539-542
Author(s):  
Tao Li ◽  
Guo Jing Ren ◽  
Li Feng Qi ◽  
Zhi Min Liu
Keyword(s):  
Mechanical System ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Micro Electro Mechanical System ◽  
Open Loop ◽  
Bridge Design ◽  
Piezoresistive Pressure Sensor ◽  
Working Principle

The relative discussion and research of Micro-Electro-Mechanical System (MEMS) and pressure sensor is carried out in this paper. The working principle of pressure sensor is analyzed, and the cantilever piezoresistive pressure sensor is studied in details. The electricity design of pressure sensor is researched. The open loop Wheatstone-bridge design is adopted in this paper, which adds the freedom of disposing circuit.

scholarly journals Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

Geometric Optimization of van der Pauw Structure Based MEMS Pressure Sensor

2007 ◽  
Author(s):  
Jesse Law ◽  
Robert Cassel ◽  
Ahsan Mian
Keyword(s):  
Pressure Sensor ◽  
Silicon Crystal ◽  
Relative Size ◽  
Orientation Angle ◽  
Wheatstone Bridge ◽  
Geometric Optimization ◽  
Biaxial Stress ◽  
Mems Devices ◽  
Piezoresistive Sensor ◽  
Van Der Pauw

This paper characterizes a piezoresistive sensor under variations of both size and orientation with respect to the silicon crystal lattice for its application to MEMS pressure sensing. The sensor to be studied is a four-terminal piezoresistive sensor commonly referred to as a van der Pauw (VDP) structure. In a recent study, our team has determined the relation between the biaxial stress state and the piezoresistive response of a VDP structure by combining the VDP resistance equations with the equations governing silicon piezoresistivity and has proposed a novel piezoresistive pressure sensor. It is observed that the sensitivity of the VDP sensor is over three times higher than the conventional filament type Wheatstone bridge resistor. With MEMS devices being used in applications which continually necessitate smaller size, characterizing the effect of relative size and misalignment on the sensitivity of the VDP sensor is important. It is determined that the performance of the sensor is strongly dependent only on the longitudinal position of the sensor on the diaphragm, and is relatively tolerant of other errors in the manufacturing process such as transverse position, sensor depth, and orientation angle.

Micro Double Pressure Sensor for Measuring the Applying Forces in Balloon Angioplasty

2013 ◽  
Author(s):  
Arman Dabiri
Keyword(s):  
Medical Device ◽  
Circuit Design ◽  
Balloon Angioplasty ◽  
Pressure Sensor ◽  
Wheatstone Bridge ◽  
Vascular Wall ◽  
Electrical Circuit ◽  
Mechanical Behaviors ◽  
Reaction Forces ◽  
Vessel Walls

This paper describes a new catheter based on double pressure sensor for measuring reaction forces of cardiovascular vessel walls in balloon angioplasty. This medical device is based on Wheatstone bridge and a passive transformer module. It assists cardiologists to measure reaction forces exiting between the catheter and the vascular wall. Reaction forces on the catheter can be grouped into two types: 1) reaction forces on the catheter head and 2) reaction forces between the balloon and the vascular wall. Its new proposed transducer module aids doctors decrease cardiology steps leading to the reduction of patients’ pains from inputting consecutive catheters into their bodies. Moreover, its special circuit design reduces needing wires for power supplying of the sensors, and simplifies the fabrication processes. Finally, mechanical behaviors of the sensor have been simulated in SolidWorks and its electrical circuit is modeled in Simulink\electrical. Also, Fabrication processes are projected in the final step of designing.

Some New Developments in Fluidic Circuit Design

1984 ◽  
Vol 106 (3) ◽  
pp. 231-235
Author(s):  
T. M. Drzewiecki
Keyword(s):  
Circuit Design ◽  
Pressure Sensor ◽  
Solid Wall ◽  
Wheatstone Bridge ◽  
Temperature Sensitive ◽  
New Developments ◽  
Set Point ◽  
Output Pressure ◽  
Point Pressure ◽  
Controlling Element

This paper presents several new developments in fluidic circuit design. The use of orifices and capillaries, as input and feedback resistors, and vice-versa, in an operational amplifier circuit is shown to result in a scaler whose gain varies either directly or inversely in proportion to kinematic viscosity. When operating on a temperature sensitive gainblock this scalar can be used to compensate for the effects of variable ambient temperature. The orifice formed by the space between a jet and a solid wall is a pressure sensitive resistance that is used as the controlling element in a gain changer and an automatically null-balanced Wheatstone bridge. In a novel use of a laminar proportional amplifier (LPA), the nonlinear saturation characteristic is used to linearize inversely nonlinear sensor and circuit outputs. Finally a set-point pressure sensor, that is a highly asymmetric LPA, is described that develops a high differential output pressure as a function of power jet pressure which can be some set-point pressure. By using this device as a pressure sensor, an ultra-quiet, high suppression performance pressure regulator has been built and demonstrated.

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