Band engineering in epitaxial monolayer transition metal dichalcogenides alloy MoxW1−xSe2 thin films

2020 ◽  
Vol 116 (19) ◽  
pp. 193101
Author(s):  
Xuedong Xie ◽  
Yunjing Ding ◽  
Junyu Zong ◽  
Wang Chen ◽  
Jingyi Zou ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Band Engineering ◽  
Metal Dichalcogenides

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

Nanoscale ◽  
2021 ◽  
Author(s):  
Anh Tuan Hoang ◽  
Kairui Qu ◽  
Xiang Chen ◽  
Jong-Hyun Ahn
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Transition Metal ◽  
Vapor Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Large Area ◽  
Wafer Scale ◽  
Metal Dichalcogenides ◽  
Device Applications

This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition and solution-based methods and various device applications.

scholarly journals TEM investigation of MoSeC films

2008 ◽  
Vol 14 (S3) ◽  
pp. 7-10 ◽  
Author(s):  
C. Silviu Sandu ◽  
Tomas Polcar ◽  
Albano Cavaleiro
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Magnetron Sputtering ◽  
Transition Metal Dichalcogenides ◽  
Deposition Method ◽  
Practical Applications ◽  
Mechanical And Tribological Properties ◽  
Lubricating Material ◽  
Metal Dichalcogenides ◽  
Contact Pressures

Transition metal dichalcogenides (TMD) are widely used as self-lubricating material either as oil additive or directly as thin films. Magnetron sputtering is a deposition method allowing depositing such films with high density and adhesion. However, their spread use in practical applications is still hindered since their excellent sliding properties are deteriorated in the presence of humidity and under high contact pressures. MoSe2, one of the members of TMD family recently studied, has been co-sputtered with carbon in order to improve the mechanical and tribological properties when compared to pure MoSe2 films.

Recent Progress in Atomic Layer Deposition of Multifunctional Oxides and Two-Dimensional Transition Metal Dichalcogenides

2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu
Keyword(s):  
Thin Films ◽  
Transition Metal ◽  
Atomic Layer Deposition ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Layer Deposition ◽  
Metal Dichalcogenides ◽  
Multifunctional Oxides

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.

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