scholarly journals Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures

2016 ◽  
Vol 108 (23) ◽  
pp. 233104 ◽  
Author(s):  
Yuzheng Guo ◽  
John Robertson
2020 ◽  
Vol 116 (19) ◽  
pp. 193101
Author(s):  
Xuedong Xie ◽  
Yunjing Ding ◽  
Junyu Zong ◽  
Wang Chen ◽  
Jingyi Zou ◽  
...  

2D Materials ◽  
2022 ◽  
Author(s):  
Xiangru Kong ◽  
Wei Luo ◽  
Linyang Li ◽  
Mina Yoon ◽  
Tom Berlijn ◽  
...  

Abstract Using ab initio tight-binding approaches, we investigate Floquet band engineering of the 1T’ phase of transition metal dichalcogenides (MX2, M = W, Mo and X = Te, Se, S) monolayers under the irradiation with circularly polarized light. Our first principles calculations demonstrate that light can induce important transitions in the topological phases of this emerging materials family. For example, upon irradiation, Te-based MX2 undergoes a phase transition from quantum spin Hall (QSH) semimetal to time-reversal symmetry broken QSH insulator with a nontrivial band gap of up to 92.5 meV. On the other hand, Se- and S-based MX2 undergoes the topological phase transition from the QSH effect to the quantum anomalous Hall (QAH) effect and into trivial phases with increasing light intensity. From a general perspective, our work brings further insight into non-equilibrium topological systems.


ACS Nano ◽  
2021 ◽  
Author(s):  
Miao Zhang ◽  
Martina Lihter ◽  
Tzu-Heng Chen ◽  
Michal Macha ◽  
Archith Rayabharam ◽  
...  

Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...


Sign in / Sign up

Export Citation Format

Share Document