Multi-linear antenna microwave plasma assisted large-area growth of 6 × 6 in.2 vertically oriented graphenes with high growth rate

2020 ◽  
Vol 91 (7) ◽  
pp. 076105
Author(s):  
Zheng Bo ◽  
Mengxiang Su ◽  
Huachao Yang ◽  
Shiling Yang ◽  
Jianhua Yan ◽  
...  
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
High Growth ◽  
High Growth Rate ◽  
Linear Antenna ◽  
Large Area ◽  
Area Growth

Deposition of large area high quality diamond wafers with high growth rate by DC arc plasma jet

2000 ◽  
Vol 9 (9-10) ◽  
pp. 1673-1677 ◽  
Author(s):  
H. Guo ◽  
Z.L. Sun ◽  
Q.Y. He ◽  
S.M. Du ◽  
X.B. Wu ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Arc Plasma ◽  
Large Area ◽  
High Quality ◽  
Dc Arc

Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity

2008 ◽  
Vol 600-603 ◽  
pp. 111-114 ◽  
Author(s):  
Masahiko Ito ◽  
L. Storasta ◽  
Hidekazu Tsuchida
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Free Exciton ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Maximum Growth Rate ◽  
High Rate ◽  
Intrinsic Defect ◽  
Large Area

A vertical hot-wall type epi-reactor that makes it possible to simultaneously achieve both a high rate of epitaxial growth and large-area uniformity at the same time has been developed. A maximum growth rate of 250 µm/h is achieved at 1650 °C. Thickness uniformity of 1.1 % and doping uniformity of 6.7 % for a 65 mm radius area are achieved while maintaining a high growth rate of 79 µm/h. We also succeeded in growing a 280 µm-thick epilayer with excellent surface morphology and long carrier lifetime of ~1 µs on average. The LTPL spectrum shows free exciton peaks as dominant, and few impurity-related or intrinsic defect related peaks are observed. The DLTS measurement for an epilayer grown at 80 µm/h shows low trap concentrations of 1.2×1012 cm-3 for Z1/2 center and 6.3×1011 cm-3 for EH6/7 center, respectively.

Morphology of Diamond Films Grown by DC Plasma Jet CVD

1989 ◽  
Vol 162 ◽  
Author(s):  
Kazuaki Kurihara ◽  
Ken-Ichi Sasaki ◽  
Motonobu Kawarada ◽  
Nagaaki Koshino
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma ◽  
Synthesis Conditions ◽  
Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

scholarly journals High quality large-area graphene synthesis with high growth rate using plasma-enhanced CVD

Synthesiology ◽  
2016 ◽  
Vol 9 (3) ◽  
pp. 124-138 ◽  
Author(s):  
Masataka HASEGAWA ◽  
Kazuo TSUGAWA ◽  
Ryuichi KATO ◽  
Yoshinori KOGA ◽  
Masatou ISHIHARA ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Graphene Synthesis

Highly Oriented Diamond Films Grown at High Growth Rate

2006 ◽  
Vol 956 ◽  
Author(s):  
Xianglin Li ◽  
Ramon Collazo ◽  
Zlatko Sitar
Keyword(s):  
Growth Rate ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
High Growth ◽  
Fold Increase ◽  
Nitrogen Addition ◽  
High Growth Rate ◽  
Process Window ◽  
Plasma Chemical Vapor Deposition

ABSTRACTHighly oriented diamond (HOD) films were grown at a high growth rate on (100) silicon substrates by microwave plasma chemical vapor deposition (MPCVD), following the standard bias-enhanced nucleation (BEN) process. The growth rate and diamond quality were investigated as a function of methane concentration in hydrogen (2-6%), and N2/CH4 ratio (0 to 0.12). A four-fold increase in the growth rate of HOD films and a three times faster expansion and coalescence of (100) facets was observed within the above process window. The films with the best quality were grown under an N2/CH4 ratio of 0.08 at methane concentration of 3.5%. The ratio of x-ray intensity between the first order twins and {111} poles was only 1%. A detailed study of the crystalline quality and phase purity as a function of methane concentration and nitrogen addition is presented.

scholarly journals High quality and large-area graphene synthesis with a high growth rate using plasma-enhanced CVD

2016 ◽  
Vol 9 (3) ◽  
pp. 124-138
Author(s):  
Masataka HASEGAWA ◽  
Kazuo TSUGAWA ◽  
Ryuichi KATO ◽  
Yoshinori KOGA ◽  
Masatou ISHIHARA ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Large Area ◽  
High Quality ◽  
Plasma Enhanced Cvd ◽  
Graphene Synthesis

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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