Initial steps toward Auad island nucleation on a c(2 × 2)-Cl Au(001) surface investigated by DFT

2020 ◽  
Vol 152 (8) ◽  
pp. 084701 ◽  
Author(s):  
Alexandra Celinda Dávila López ◽  
Eckhard Pehlke
Keyword(s):  
Island Nucleation

Role of boundaries in the crystallization of amorphous films

1988 ◽  
Vol 46 ◽  
pp. 626-627
Author(s):  
D. A. Smith
Keyword(s):  
Low Temperature ◽  
Amorphous State ◽  
Nucleation And Growth ◽  
Amorphous Films ◽  
Island Nucleation ◽  
Surface Steps ◽  
Transmission Electron ◽  
Component Systems ◽  
Temperature Deposition

The nucleation and growth processes which lead to the formation of a thin film are particularly amenable to investigation by transmission electron microscopy either in situ or subsequent to deposition. In situ studies have enabled the observation of island nucleation and growth, together with addition of atoms to surface steps. This paper is concerned with post-deposition crystallization of amorphous alloys. It will be argued that the processes occurring during low temperature deposition of one component systems are related but the evidence is mainly indirect. Amorphous films result when the deposition conditions such as low temperature or the presence of impurities (intentional or unintentional) preclude the atomic mobility necessary for crystallization. Representative examples of this behavior are CVD silicon grown below about 670°C, metalloids, such as antimony deposited at room temperature, binary alloys or compounds such as Cu-Ag or Cr O2, respectively. Elemental metals are not stable in the amorphous state.

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

1998 ◽  
Vol 533 ◽  
Author(s):  
O. Leifeld ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Surface Roughness ◽  
Critical Thickness ◽  
Carbon Deposition ◽  
Compressive Strain ◽  
Second Step ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Facet Formation

AbstractThe morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

Island Nucleation in a Reactive Two-Component System

2001 ◽  
Vol 87 (17) ◽  
Author(s):  
T. H. McDaniels ◽  
J. A. Venables ◽  
P. A. Bennett
Keyword(s):  
Two Component System ◽  
Component System ◽  
Island Nucleation ◽  
Two Component

scholarly journals Влияние электромиграции на зарождение вакансионных островков на поверхности Si(100) при сублимации

2019 ◽  
Vol 53 (6) ◽  
pp. 805
Author(s):  
С.В. Ситников ◽  
Е.Е. Родякина ◽  
А.В. Латышев
Keyword(s):  
Electron Microscopy ◽  
Theoretical Model ◽  
Temperature Dependence ◽  
Effective Charge ◽  
Positive Sign ◽  
Nucleation Center ◽  
Island Nucleation ◽  
Reflection Electron Microscopy ◽  
Elementary Charge

AbstractBy means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

STM studies of island nucleation during hyperthermal atom deposition

2002 ◽  
Vol 749 ◽  
Author(s):  
Joshua M. Pomeroy ◽  
Joel D. Brock
Keyword(s):  
Kinetic Energy ◽  
Ion Beam ◽  
Mean Field ◽  
Scaling Exponent ◽  
Island Nucleation ◽  
Precise Control ◽  
Ion Kinetic Energy ◽  
The Mean ◽  
Sputter Erosion ◽  
Hyperthermal Energy

ABSTRACTWe report fundamental changes in island nucleation dynamics as the kinetic energy of the constituent particles used for film grown is increased. A hyperthermal energy ion beam-line with precise control over ion kinetic energy was used to grow copper islands on a Cu(100) substrate. Dramatic increases in island densities were observed with increasing kinetic energy from thermal energies to 150 eV. We find that sputter erosion and the formation of adatom-vacancy pairs contribute to this increase. In addition, variations in flux and temperature suggest that the mean-field scaling exponent is sensitive to atomistic mechanisms activated by the ion beam.

Scaling Description of Sub-Monolayer Epitaxial Growth

1992 ◽  
Vol 280 ◽  
Author(s):  
A. Zangwill
Keyword(s):  
Epitaxial Growth ◽  
Surface Diffusion ◽  
Diffusion Constant ◽  
Current Status ◽  
Future Research ◽  
Deposition Flux ◽  
Simple Relationship ◽  
Island Nucleation ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

ABSTRACTRecent experimental results aimed at the measurement of surface diffusion constants by use of scanning tunnelling microscopy and diffraction techniques have reawakened interest in the statistical properties of two-dimensional island nucleation and growth in the submonolayer regime. Classical homogeneous rate equation studies published over twenty years ago established a simple relationship among the number density of stable islands, the deposition flux, and the adatom surface diffusion constant. Recent Monte Carlo simulation studies confirm this prediction and considerably extend the scope of such a scaling description of submonolayer epitaxial growth. In this article, I review the current status of theory and experiment in this area and suggest some areas for future research.

Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
G. M. Vanacore ◽  
M. Zani ◽  
G. Isella ◽  
J. Osmond ◽  
M. Bollani ◽  
...  
Keyword(s):  
Surface Diffusion ◽  
Quantitative Investigation ◽  
Island Nucleation
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